 |  | | |
| PartNumber | 2SJ652-1E | 2SJ652,J652 | 2SJ652,J652, |
| Description | MOSFET PCH 4V DRIVE SERIES | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 28 A | - | - |
| Rds On Drain Source Resistance | 28.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 80 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Configuration | Single | - | - |
| Packaging | Tube | - | - |
| Series | 2SJ652 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | ON Semiconductor | - | - |
| Fall Time | 180 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 210 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 310 ns | - | - |
| Typical Turn On Delay Time | 33 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
| 2SJ652-1E | MOSFET PCH 4V DRIVE SERIES | ||
| 2SJ652,J652 | Nuovo e originale | ||
| 2SJ652,J652, | Nuovo e originale | ||
| 2SJ652-TH | Nuovo e originale | ||
| 2SJ652/ | Nuovo e originale | ||
ON Semiconductor |
2SJ652-RA11 | MOSFET POWER MOSFET | |
| 2SJ652 | MOSFET POWER MOSFET | ||
| 2SJ652-1E | IGBT Transistors MOSFET PCH 4V DRIVE SERIES | ||
| 2SJ652 | MOSFET P-CH 60V 28A TO-220ML | ||
| 2SJ652-RA11 | MOSFET P-CH 60V 28A TO-220ML | ||
| 2SJ652-1EX | MOSFET P-CH TO-220FP-3 |