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| PartNumber | 2SA1941-O(Q) | 2SA1941-O(QT) | 2SA1941-O(Q,T) |
| Description | Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W | Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W | |
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 140 V | - | - |
| Collector Base Voltage VCBO | - 140 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | 2 V | - | - |
| Gain Bandwidth Product fT | 30 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 83 | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 10 A | - | - |
| DC Collector/Base Gain hfe Min | 35 | - | - |
| Pd Power Dissipation | 100 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.165788 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Toshiba |
2SA1941-O(Q) | Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W | |
| 2SA1941-O(QT) | Nuovo e originale | ||
| 2SA1941-O(Q,T) | Bipolar Transistors - BJT PNP VCEO -140V 70-W DC -10A 100W |