 |  |  | |
| PartNumber | 2N5629 PBFREE | 2N5629 | 2N5629G. |
| Description | Bipolar Transistors - BJT 100Vcbo 100Vceo 7.0Vebo 5.0A 200W | Bipolar Transistors - BJT NPN High Pwr | |
| Manufacturer | Central Semiconductor | Central Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | T | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-3-2 | TO-3-2 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | 100 V | - |
| Collector Base Voltage VCBO | 100 V | 100 V | - |
| Emitter Base Voltage VEBO | 7 V | 7 V | - |
| Collector Emitter Saturation Voltage | 2 V | 2 V | - |
| Gain Bandwidth Product fT | 1 MHz | 1 MHz | - |
| Minimum Operating Temperature | - 65 C | - 60 C | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| Series | 2N56 | 2N5629 | - |
| DC Current Gain hFE Max | 100 at 8 A, 2 V | - | - |
| Packaging | Tube | Tube | - |
| Brand | Central Semiconductor | Central Semiconductor | - |
| Continuous Collector Current | 16 A | 0.45 A | - |
| DC Collector/Base Gain hfe Min | 25 at 8 A, 2 V | 4 at 16 A, 2 V | - |
| Pd Power Dissipation | 200 W | 200 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 20 | 20 | - |
| Subcategory | Transistors | Transistors | - |
| Maximum DC Collector Current | - | 16 A | - |
| Part # Aliases | - | 2N5629 TIN/LEAD | - |
| Unit Weight | - | 0.225789 oz | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Central Semiconductor |
2N5629 PBFREE | Bipolar Transistors - BJT 100Vcbo 100Vceo 7.0Vebo 5.0A 200W | |
| 2N5629 | Bipolar Transistors - BJT NPN High Pwr | ||
| 2N5629G. | Nuovo e originale | ||
| 2N5629 | Bipolar Transistors - BJT NPN High Pw | ||
| 2N5629 PBFREE | Bipolar Transistors - BJT 100Vcbo 100Vceo 7.0Vebo 5.0A 200W |