| PartNumber | 2DB1182Q-13 | 2DB1184Q-13 | 2DB1188P-13 |
| Description | Bipolar Transistors - BJT 32V PNP Trans -40V 10W -32V VCEO -2A | Bipolar Transistors - BJT PNP 2.5K BIPOLAR | Bipolar Transistors - BJT 1000W -32Vceo |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | DPAK-3 | SOT-89-3 |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | - 32 V | 50 V | 32 V |
| Collector Base Voltage VCBO | - 40 V | 60 V | 40 V |
| Emitter Base Voltage VEBO | - 5 V | 5 V | 5 V |
| Collector Emitter Saturation Voltage | - 0.8 V | - | - |
| Maximum DC Collector Current | - 3 A | 3 A | 2 A |
| Gain Bandwidth Product fT | 110 MHz | 110 MHz | 120 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | 2DB11 | 2DB11 | 2DB11 |
| DC Current Gain hFE Max | 270 at - 500 mA, - 3 V | 120 | - |
| Packaging | Reel | Reel | Reel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| DC Collector/Base Gain hfe Min | 120 | 120 | 82 |
| Pd Power Dissipation | 10 W | 15000 mW | 1000 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.139332 oz | 0.009185 oz | 0.001834 oz |
| Height | - | 2.4 mm | 1.5 mm |
| Length | - | 6.8 mm | 4.5 mm |
| Width | - | 6.2 mm | 2.48 mm |