VP2206N2 vs VP2206N3-G vs VP2206N3

 
PartNumberVP2206N2VP2206N3-GVP2206N3
DescriptionMOSFET 60V 0.9OhmMOSFET 60V 0.9OhmMOSFET 60V 0.9Ohm
ManufacturerMicrochipMicrochipVISHAY
Product CategoryMOSFETMOSFETFETs - Single
RoHSTY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-39-3TO-92-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current750 mA640 mA-
Rds On Drain Source Resistance900 mOhms900 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation6 W1 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingBulkBulk-
Height6.6 mm5.33 mm-
Length9.4 mm5.21 mm-
Transistor Type1 P-Channel1 P-Channel-
TypeFETFET-
Width9.4 mm4.19 mm-
BrandMicrochip TechnologyMicrochip Technology-
Fall Time22 ns22 ns-
Product TypeMOSFETMOSFET-
Rise Time16 ns16 ns-
Factory Pack Quantity5001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time16 ns16 ns-
Typical Turn On Delay Time4 ns4 ns-
Unit Weight0.039133 oz0.016000 oz-
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