STW26NM60N vs STW26NM60ND vs STW26NM60N 26NM60N

 
PartNumberSTW26NM60NSTW26NM60NDSTW26NM60N 26NM60N
DescriptionMOSFET N-channel 600 V Mdmesh II PowerMOSFET N-CH 600V 0.145Ohm typ. 21A FDmesh II
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current20 A21 A-
Rds On Drain Source Resistance165 mOhms145 mOhms-
Vgs th Gate Source Threshold Voltage2 V4 V-
Vgs Gate Source Voltage10 V25 V-
Qg Gate Charge60 nC54.6 nC-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation140 W190 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameMDmesh--
PackagingTubeTube-
Height20.15 mm--
Length15.75 mm--
SeriesSTW26NM60NSTW26NM60ND-
Transistor Type1 N-Channel Power MOSFET1 N-Channel-
TypePower MOSFET--
Width5.15 mm--
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time50 ns27.5 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns14.5 ns-
Factory Pack Quantity60030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time85 ns69 ns-
Typical Turn On Delay Time13 ns22 ns-
Unit Weight1.340411 oz1.340411 oz-
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