STGD5NB120SZT4 vs STGD5NB120SZ-1 vs STGD5NB120SZ

 
PartNumberSTGD5NB120SZT4STGD5NB120SZ-1STGD5NB120SZ
DescriptionIGBT Transistors N-Ch 1200 Volt 5 AmpIGBT Transistors 5 A 1200V LOW DROP INTERN CLAMPED IGBT
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-252-3IPAK-3-
Mounting StyleSMD/SMTThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage2 V--
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C10 A--
Pd Power Dissipation55 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSTGD5NB120SZSTGD5NB120SZ-
PackagingReelTube-
Continuous Collector Current Ic Max10 A10 A-
Height2.4 mm6.2 mm-
Length6.6 mm6.6 mm-
Width6.2 mm2.4 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Continuous Collector Current5 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity25003000-
SubcategoryIGBTsIGBTs-
Unit Weight0.139332 oz0.139332 oz-
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