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| PartNumber | SQS482ENW-T1_GE3 | SQS481ENW-T1_GE3 | SQS482EN-T1_GE3 |
| Description | MOSFET 30V Vds -/+20V Vgs PowerPAK 1212-8W | MOSFET -150V Vds PowerPAK AEC-Q101 Qualified | MOSFET 30V 16A 62W AEC-Q101 Qualified |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-1212-8W-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | P-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 150 V | 30 V |
| Id Continuous Drain Current | 16 A | 16 A | 16 A |
| Rds On Drain Source Resistance | 7 mOhms | 1.095 Ohms | 7 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 3 V | 1.5 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 26 nC | 8 nC | 39 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 62 W | 62.5 W | 62 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 P-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Fall Time | 18 ns | 2.6 ns | 18 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 21 ns | 2.3 ns | 21 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 49 ns | 15.3 ns | 49 ns |
| Typical Turn On Delay Time | 7 ns | 7.1 ns | 7 ns |
| Qualification | - | AEC-Q101 | AEC-Q101 |
| Series | - | SQ | SQ |
| Height | - | - | 1.04 mm |
| Length | - | - | 3.3 mm |
| Width | - | - | 3.3 mm |
| Forward Transconductance Min | - | - | 70 S |