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| PartNumber | SIHP180N60E-GE3 | SIHP186N60EF-GE3 | SIHP18N50C |
| Description | MOSFET 600V Vds 30V Vgs TO-220AB | MOSFET Power MOSFET | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220AB-3 | TO-220AB-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 500 V | - |
| Id Continuous Drain Current | 19 A | 18 A | - |
| Rds On Drain Source Resistance | 180 mOhms | 225 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 5 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 22 nC | 65 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 156 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Series | E | - | - |
| Transistor Type | 1 N-Channel E-Series Power MOSFET | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 5.3 S | - | - |
| Fall Time | 23 ns | 44 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 49 ns | 27 ns | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 22 ns | 32 ns | - |
| Typical Turn On Delay Time | 14 ns | 80 ns | - |
| Tradename | - | TrenchFET | - |