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| PartNumber | SI4590DY-T1-GE3 | SI4590DY-T1 | SI4599DY |
| Description | MOSFET -100V Vds 20V Vgs SO-8 N&P PAIR | ||
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel P-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 5.6 A, 3.4 A | - | - |
| Rds On Drain Source Resistance | 57 mOhms, 183 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 11.5 nC, 36 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 3.6 W, 4.2 W | - | - |
| Configuration | Dual | 1 N-Channel 1 P-Channel | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Reel | - |
| Series | SI4 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel 1 P-Channel | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 9 S, 9.3 S | - | - |
| Fall Time | 12 ns, 25 ns | 6 ns 20 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 73 ns, 80 ns | 11 ns 11 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 14 ns, 42 ns | 14 ns 42 ns | - |
| Typical Turn On Delay Time | 32 ns, 55 ns | 32 ns 55 ns | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Package Case | - | SO-8 | - |
| Pd Power Dissipation | - | 3.6 W 4.2 W | - |
| Vgs Gate Source Voltage | - | +/- 20 V +/- 20 V | - |
| Id Continuous Drain Current | - | 5.6 A - 3.4 A | - |
| Vds Drain Source Breakdown Voltage | - | 100 V - 100 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.5 V - 1.5 V | - |
| Rds On Drain Source Resistance | - | 72 mOhms 205 mOhms | - |
| Qg Gate Charge | - | 7.5 nC 24 nC | - |