PSMN5R5-60YS,115 vs PSMN5R5-60YS vs PSMN5R5-60YS,115-CUT TAPE

 
PartNumberPSMN5R5-60YS,115PSMN5R5-60YSPSMN5R5-60YS,115-CUT TAPE
DescriptionMOSFET N-CHANNEL 60V STD LEVEL MOSFETPOWER FIELD-EFFECT TRANSISTOR, 100A I(D), 60V, 0.055OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MO-235
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLFPAK56-5--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance8.3 mOhms--
Vgs th Gate Source Threshold Voltage4.6 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge56 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation130 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.1 mm--
Length5 mm--
Transistor Type1 N-Channel--
TypeN-Channel LFPAK 60 V 5.2 mOhms Standard Level FET--
Width4.1 mm--
BrandNexperia--
Fall Time14 ns--
Product TypeMOSFET--
Rise Time24 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time44 ns--
Typical Turn On Delay Time23 ns--
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