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| PartNumber | PBSS3540M,315 | PBSS3540MB,315 | PBSS3540M |
| Description | Bipolar Transistors - BJT TRANS BISS TAPE-7 | Bipolar Transistors - BJT 40 V, 0.5 A PNP low VCEsat transistor | |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DFN-1006-3 | DFN-1006B-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 40 V | - 40 V | - |
| Collector Base Voltage VCBO | 40 V | - 40 V | - |
| Emitter Base Voltage VEBO | 6 V | - 6 V | - |
| Maximum DC Collector Current | 0.5 A | - 1 A | - |
| Gain Bandwidth Product fT | 300 MHz | 300 MHz | - |
| Minimum Operating Temperature | - 65 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| DC Current Gain hFE Max | 200 at 10 mA, 2 V | - | - |
| Height | 0.47 mm | - | - |
| Length | 1.02 mm | - | - |
| Packaging | Reel | Reel | - |
| Width | 0.62 mm | - | - |
| Brand | Nexperia | Nexperia | - |
| DC Collector/Base Gain hfe Min | 200 at 10 mA, 2 V, 150 at 100 mA, 2 V, 40 at 500 mA, 2 V | 200 | - |
| Pd Power Dissipation | 430 mW | 590 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 10000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | PBSS3540M T/R | - | - |
| Unit Weight | 0.000028 oz | - | - |
| Collector Emitter Saturation Voltage | - | - 50 mV | - |
| Continuous Collector Current | - | - 500 mA | - |