NX3020NAKV,115 vs NX3020NAKVYL vs NX3020NAKV

 
PartNumberNX3020NAKV,115NX3020NAKVYLNX3020NAKV
DescriptionMOSFET NX3020NAKV/SOT6/REEL 7" Q1/T1MOSFET 30V 200mA dual Nchan Trench MOSFET
ManufacturerNexperiaNexperiaNXP Semiconductors
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-666-6SOT-666-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current200 mA--
Rds On Drain Source Resistance4.5 Ohms--
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage10 V--
Qg Gate Charge0.34 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation375 mW--
ConfigurationDualDual-
Channel ModeEnhancement--
PackagingReelReelDigi-ReelR Alternate Packaging
Transistor Type2 N-Channel2 N-Channel-
BrandNexperiaNexperia-
Forward Transconductance Min320 mS--
Fall Time17 ns--
Product TypeMOSFETMOSFET-
Rise Time5 ns--
Factory Pack Quantity40008000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time34 ns--
Typical Turn On Delay Time5 ns--
Unit Weight0.000095 oz--
Series---
Package Case--SOT-563, SOT-666
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SOT-666
FET Type--2 N-Channel (Dual)
Power Max--375mW
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--13pF @ 10V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--200mA
Rds On Max Id Vgs--4.5 Ohm @ 100mA, 10V
Vgs th Max Id--1.5V @ 250μA
Gate Charge Qg Vgs--0.44nC @ 4.5V
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