NTGD4161PT1G vs NTGD4167C vs NTGD4167CT1

 
PartNumberNTGD4161PT1GNTGD4167CNTGD4167CT1
DescriptionMOSFET PFET TSOP6 20V 2.3A 160mOhm
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSOP-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.1 A--
Rds On Drain Source Resistance160 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.1 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.94 mm--
Length3 mm--
ProductMOSFET Small Signal--
Transistor Type2 P-Channel--
TypeFETs - MOSFETs--
Width1.5 mm--
BrandON Semiconductor--
Forward Transconductance Min2.7 S--
Fall Time9.2 ns--
Product TypeMOSFET--
Rise Time9.2 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12.5 ns--
Typical Turn On Delay Time7.6 ns--
Unit Weight0.000705 oz--
Top