MJD253-1G vs MJD253 vs MJD253-001

 
PartNumberMJD253-1GMJD253MJD253-001
DescriptionBipolar Transistors - BJT 4A 100V 12.5W PNPTRANS PNP 100V 4A IPAK
ManufacturerON SemiconductorONON
Product CategoryBipolar Transistors - BJTTransistors (BJT) - SingleTransistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseIPAK-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage0.6 V--
Maximum DC Collector Current4 A--
Gain Bandwidth Product fT40 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD253--
Height2.38 mm--
Length6.73 mm--
PackagingTube--
Width6.22 mm--
BrandON Semiconductor--
Continuous Collector Current4 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation12.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity75--
SubcategoryTransistors--
Unit Weight0.024727 oz--
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