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MJD253-1G

MJD253-1G
Mfr. #:
MJD253-1G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - BJT 4A 100V 12.5W PNP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
MJD253-1G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJD253-1G DatasheetMJD253-1G Datasheet (P4-P6)MJD253-1G Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
IPAK-3
Polarità del transistor:
PNP
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
100 V
Collettore-tensione di base VCBO:
100 V
Emettitore-tensione di base VEBO:
7 V
Tensione di saturazione collettore-emettitore:
0.6 V
Corrente massima del collettore CC:
4 A
Guadagno larghezza di banda prodotto fT:
40 MHz
Temperatura di esercizio minima:
- 65 C
Temperatura massima di esercizio:
+ 150 C
Serie:
MJD253
Altezza:
2.38 mm
Lunghezza:
6.73 mm
Confezione:
Tubo
Larghezza:
6.22 mm
Marca:
ON Semiconductor
Corrente continua del collettore:
4 A
Guadagno base/collettore DC hfe min:
40
Pd - Dissipazione di potenza:
12.5 W
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
75
sottocategoria:
transistor
Unità di peso:
0.024727 oz
Tags
MJD25, MJD2, MJD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
ON Semi MJD253-1G PNP Bipolar Transistor, 4 A, 100 V, 3-Pin IPAK | ON Semiconductor MJD253-1G
***r Electronics
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
***emi
4.0 A, 100 V PNP Bipolar Power Transistor
***ical
Trans GP BJT PNP 100V 4A Automotive 3-Pin(3+Tab) IPAK Tube
***ark
POWER TRANSISTOR, PNP, -100V, I-PAK; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251
***emi
Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single
***ical
Trans GP BJT PNP 100V 4A 1000mW 3-Pin(3+Tab) TP Bag
***ark
TRANSISTOR, PNP, 100V, 4A, 20W, TO-251; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:4A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
***-Wing Technology
Bulk Through Hole PNP 3 Bipolar (BJT) Transistor 200 @ 500mA 5V 1muA ICBO 1W 130MHz
***r Electronics
Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251
***emi
Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single
***et
Trans GP BJT PNP 100V 4A 3-Pin(3+Tab) TP Bag
***r Electronics
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
***emi
6.0 A, 100 V PNP Bipolar Power Transistor
***p One Stop
Trans GP BJT PNP 100V 6A Automotive 3-Pin(3+Tab) IPAK Rail
***enic
100V 20W 6A 15@3A4V 3MHz 1.5V@6A600mA PNP -65¡Í~+150¡Í@(Tj) IPAK Bipolar Transistors - BJT ROHS
***nell
TRANSISTOR, BIPOL, PNP, -100V; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 20W; DC Collector Current: -6A; DC Current Gain hFE: 15hFE; Transistor Ca
***ark
BIPOLAR TRANSISTOR, PNP, -100V, D-PAK-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:100V; Continuous Collector Current:6A; Power Dissipation:20W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
MJD253-1G
DISTI # MJD253-1GOS-ND		ON SemiconductorTRANS PNP 100V 4A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		821In Stock
  • 5025:$0.2693
  • 2550:$0.2893
  • 525:$0.3990
  • 150:$0.5047
  • 75:$0.6184
  • 10:$0.6580
  • 1:$0.7500
MJD253-1G
DISTI # MJD253-1G		ON SemiconductorTrans GP BJT PNP 100V 4A 3-Pin(3+Tab) IPAK Rail (Alt: MJD253-1G)
RoHS: Compliant
Min Qty: 75		Europe - 1575
  • 750:€0.2399
  • 450:€0.2589
  • 300:€0.2799
  • 150:€0.3059
  • 75:€0.3739
MJD253-1G
DISTI # MJD253-1G		ON SemiconductorTrans GP BJT PNP 100V 4A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: MJD253-1G)
RoHS: Compliant
Min Qty: 1191
Container: Bulk		Americas - 0
  • 11910:$0.2589
  • 5955:$0.2649
  • 3573:$0.2689
  • 2382:$0.2719
  • 1191:$0.2739
MJD253-1G
DISTI # 26K4441		ON SemiconductorPOWER TRANSISTOR, PNP, -100V, I-PAK,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:40MHz,Power Dissipation Pd:12.5W,DC Collector Current:-4A,DC Current Gain hFE:40hFE,No. of Pins:3Pins RoHS Compliant: Yes0
  • 10000:$0.2500
  • 2500:$0.2600
  • 1000:$0.3070
  • 500:$0.3450
  • 100:$0.3840
  • 10:$0.5950
  • 1:$0.7170
MJD253-1G
DISTI # 70466681		ON SemiconductorON Semi MJD253-1G PNP Bipolar Transistor,4 A,100 V,3-Pin IPAK
RoHS: Compliant		0
  • 40:$0.7300
  • 100:$0.7200
  • 200:$0.6800
  • 400:$0.6300
MJD253-1G
DISTI # 863-MJD253-1G		ON SemiconductorBipolar Transistors - BJT 4A 100V 12.5W PNP
RoHS: Compliant		664
  • 1:$0.7100
  • 10:$0.5890
  • 100:$0.3800
  • 1000:$0.3040
  • 2500:$0.2570
  • 10000:$0.2480
  • 25000:$0.2380
MJD253-1GON SemiconductorPower Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
RoHS: Compliant		30158
  • 1000:$0.2800
  • 500:$0.2900
  • 100:$0.3000
  • 25:$0.3200
  • 1:$0.3400
MJD253-1G
DISTI # 8024543P		ON SemiconductorMJD253-1GBIP DPAK PNP 4A 100V SL F, TU330
  • 1000:£0.2550
  • 400:£0.2940
  • 100:£0.3330
MJD253-1GON Semiconductor*** FREE SHIPPING ORDERS OVER $100 *** 4 A, 100 V, PNP, Si, POWER TRANSISTOR363
  • 177:$0.2380
  • 40:$0.3400
  • 1:$0.6800
MJD253-1G
DISTI # 1705815		ON SemiconductorPOWER TRANSISTOR, PNP, -100V, I-PAK
RoHS: Compliant		496
  • 50000:$0.3610
  • 25000:$0.3670
  • 10000:$0.3820
  • 2500:$0.3950
  • 1000:$0.4680
  • 100:$0.5850
  • 10:$0.9060
  • 1:$1.1000
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SBCP56-16T1G

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HRG3216P-3000-B-T1

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 Thin Film Resistors - SMD 1.0W 300 ohm 0.1% 1206 25ppm
RG1005P-102-B-T5

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 Thin Film Resistors - SMD 1/16W 1K Ohms 0.1% 0402 25ppm
EEU-FS1C332

Mfr.#: EEU-FS1C332

OMO.#: OMO-EEU-FS1C332

 Aluminum Electrolytic Capacitors - Radial Leaded 16VDC 3300uF 10000H 12.5x25mm
MINISMDC050F-2

Mfr.#: MINISMDC050F-2

OMO.#: OMO-MINISMDC050F-2

 Resettable Fuses - PPTC .50A 24V 100A Imax
SBCP56-16T1G

Mfr.#: SBCP56-16T1G

OMO.#: OMO-SBCP56-16T1G-ON-SEMICONDUCTOR

 Bipolar Transistors - BJT SBN SSP SOT223 NPN
LL4148

Mfr.#: LL4148

OMO.#: OMO-LL4148-ON-SEMICONDUCTOR

 DIODE GEN PURP 100V 200MA SOD80
Disponibilità
Azione:
664
Su ordine:
2647
Inserisci la quantità:
Il prezzo attuale di MJD253-1G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,71 USD
0,71 USD
10
0,59 USD
5,89 USD
100
0,38 USD
38,00 USD
1000
0,30 USD
304,00 USD
2500
0,26 USD
642,50 USD
10000
0,25 USD
2 480,00 USD
25000
0,24 USD
5 950,00 USD
50000
0,23 USD
11 700,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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