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| PartNumber | Jan2N1893 | Jan2N1893S | JAN2N1890 |
| Description | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
| Manufacturer | Microchip | Microchip | Microsemi |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
| RoHS | N | N | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-5-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 120 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 500 mV | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| DC Current Gain hFE Max | 120 at 150mA, 10 VDC | - | - |
| Packaging | Bulk | Bulk | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| DC Collector/Base Gain hfe Min | 40 at 150 mA, 10 VDC | - | - |
| Pd Power Dissipation | 800 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | Transistors | Transistors | - |