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| PartNumber | IXTA260N055T2 | IXTA260N055T2-7 | IXTA26P10T |
| Description | MOSFET DISCMSFT NCHTRENCHGATE-GEN2 | MOSFET 260 Amps 55V | MOSFET TenchP Power MOSFET |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Tradename | TrenchT2 | HiPerFET | - |
| Packaging | Tube | Tube | Tube |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Technology | - | Si | Si |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | TO-263-7 | - |
| Transistor Polarity | - | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | - | 55 V | - |
| Id Continuous Drain Current | - | 260 A | - |
| Rds On Drain Source Resistance | - | 3.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 140 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 480 W | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 4.7 mm | - |
| Length | - | 9.4 mm | - |
| Series | - | IXTA260N055 | IXTA26P10 |
| Type | - | TrenchT2 Power MOSFET | - |
| Width | - | 10.2 mm | - |
| Forward Transconductance Min | - | 55 S | - |
| Fall Time | - | 24 ns | - |
| Rise Time | - | 27 ns | - |
| Typical Turn Off Delay Time | - | 36 ns | - |
| Typical Turn On Delay Time | - | 20 ns | - |
| Unit Weight | - | 0.056438 oz | 0.056438 oz |
| Package Case | - | - | TO-263AA-3 |
| Id Continuous Drain Current | - | - | - 26 A |
| Vds Drain Source Breakdown Voltage | - | - | - 100 V |
| Rds On Drain Source Resistance | - | - | 90 mOhms |