IRG7PH35UD-EP vs IRG7PH35UD1 vs IRG7PH35UD1-E

 
PartNumberIRG7PH35UD-EPIRG7PH35UD1IRG7PH35UD1-E
DescriptionIGBT Transistors IGBT DISCRETES
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough HoleThrough HoleThrough Hole
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2.2 V2.2 V2.2 V
Continuous Collector Current at 25 C50 A50 A50 A
Pd Power Dissipation180 W--
PackagingTubeTubeTube
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001548020--
Unit Weight1.340411 oz1.340411 oz1.340411 oz
Series---
Package Case-TO-247-3TO-247-3
Input Type-StandardStandard
Mounting Type-Through HoleThrough Hole
Supplier Device Package-TO-247ADTO-247AD
Power Max-179W179W
Reverse Recovery Time trr---
Current Collector Ic Max-50A50A
Voltage Collector Emitter Breakdown Max-1200V1200V
IGBT Type-TrenchTrench
Current Collector Pulsed Icm-150A150A
Vce on Max Vge Ic-2.2V @ 15V, 20A2.2V @ 15V, 20A
Switching Energy-620μJ (off)620μJ (off)
Gate Charge-130nC130nC
Td on off 25°C--/160ns-/160ns
Test Condition-600V, 20A, 10 Ohm, 15V600V, 20A, 10 Ohm, 15V
Pd Power Dissipation-179 W179 W
Collector Emitter Voltage VCEO Max-1.2 kV1.2 kV
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