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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IRG7PH35UD1PBF DISTI # IRG7PH35UD1PBF-ND | Infineon Technologies AG | IGBT 1200V 50A 179W TO247 RoHS: Compliant Min Qty: 100 Container: Tube | Limited Supply - Call | |
| IRG7PH35UD1MPBF DISTI # IRG7PH35UD1MPBF-ND | Infineon Technologies AG | IGBT 1200V 50A 179W TO247AD RoHS: Compliant Min Qty: 100 Container: Tube | Limited Supply - Call | |
| IRG7PH35UD1-EP DISTI # IRG7PH35UD1-EP-ND | Infineon Technologies AG | IGBT 1200V 50A 179W TO247 RoHS: Compliant Min Qty: 350 Container: Tube | Limited Supply - Call | |
| IRG7PH35UD1PBF DISTI # IRG7PH35UD1PBF | Infineon Technologies AG | Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247AC (Alt: IRG7PH35UD1PBF) RoHS: Compliant Min Qty: 400 | Asia - 0 | |
| IRG7PH35UD1PBF DISTI # 41T2864 | Infineon Technologies AG | IGBT,N CHANNEL,DIODE,1200V,50A,TO-247AC,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.9V,Power Dissipation Pd:179W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Product Range:-,MSL:- RoHS Compliant: Yes | 6 |
|
| IRG7PH35UD1-EP DISTI # 76R0795 | Infineon Technologies AG | INSULATED GATE BIPOLAR TRANSISTOR,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:179W,Collector Emitter Voltage V(br)ceo:-,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes | 2 |
|
| IRG7PH35UD1-EP DISTI # 942-IRG7PH35UD1-EP | Infineon Technologies AG | IGBT Transistors IGBT DISCRETES RoHS: Compliant | 15 |
|
| IRG7PH35UD1PBF DISTI # 942-IRG7PH35UD1PBF | Infineon Technologies AG | IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A RoHS: Compliant | 0 | |
| IRG7PH35UD1MPBF DISTI # 942-IRG7PH35UD1MPBF | Infineon Technologies AG | IGBT Transistors 1200V UltraFast Discrete IGBT RoHS: Compliant | 0 | |
| IRG7PH35UD1-EP | International Rectifier | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AD RoHS: Compliant | 951800 |
|
| IRG7PH35UD1MPBF | International Rectifier | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | 2355 |
|
| IRG7PH35UD1PBF | International Rectifier | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AC RoHS: Compliant | 15 |
|
| IRG7PH35UD1PBF DISTI # 7377568P | Infineon Technologies AG | TRANSISTOR IGBT N-CH 1.2KV 50A TO247AC, TU | 65 |
|
| IRG7PH35UD1-EP DISTI # 9074921P | Infineon Technologies AG | IGBT N-CHANNEL 1200V 50A TO-247AD, TU | 15 |
|
| IRG7PH35UD1PBF | International Rectifier | RoHS: Compliant | Europe - 325 | |
| IRG7PH35UD1PBF DISTI # 1857367 | Infineon Technologies AG | IGBT,N CH,DIODE,1200V,50A,TO-247AC RoHS: Compliant | 414 |
|
| IRG7PH35UD1-EP DISTI # 1822979 | Infineon Technologies AG | INSULATED GATE BIPOLAR TRANSISTOR RoHS: Compliant | 2 |
|
| IRG7PH35UD1-EP DISTI # 1822979 | Infineon Technologies AG | INSULATED GATE BIPOLAR TRANSISTOR RoHS: Compliant | 2 |
|
| IRG7PH35UD1PBF DISTI # 1857367 | Infineon Technologies AG | IGBT,N CH,DIODE,1200V,50A,TO-247AC RoHS: Compliant | 414 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IRG7PH35UD-EP OMO.#: OMO-IRG7PH35UD-EP |
IGBT Transistors IGBT DISCRETES |
|
Mfr.#: IRG7PSH73K10PBF OMO.#: OMO-IRG7PSH73K10PBF |
IGBT Transistors 1200V 220A SUPER-247 |
|
Mfr.#: IRG7PH50U-EP |
IGBT 1200V ULTRA FAST TO247 |
|
Mfr.#: IRG7PH28UD1MPBF |
IGBT 1200V 30A 115W TO247AC |
|
Mfr.#: IRG7PK35UD1MPBF |
IGBT 1200V ULTRA FAST TO247 |
|
|
Mfr.#: IRG7PH42UPBF |
IGBT Transistors 1200V 90A |
|
|
Mfr.#: IRG7PH37K10DEPBF OMO.#: OMO-IRG7PH37K10DEPBF-1190 |
Nuovo e originale |
|
|
Mfr.#: IRG7PH42UD1MPBF. OMO.#: OMO-IRG7PH42UD1MPBF--1190 |
Nuovo e originale |
|
|
Mfr.#: IRG7PH42UEP OMO.#: OMO-IRG7PH42UEP-1190 |
Nuovo e originale |
|
|
Mfr.#: IRG7PH46UDEP OMO.#: OMO-IRG7PH46UDEP-1190 |
IGBT, SINGLE, N-CH, 1.2KV, 108A, TO247AD |