 | |  | |
| PartNumber | IPD33CN10NGATMA1 | IPD33CN10NGBUMA1 | IPD33CN10N G |
| Description | MOSFET MV POWER MOS | MOSFET N-Ch 100V 27A DPAK-2 OptiMOS 2 | MOSFET N-Ch 100V 27A DPAK-2 OptiMOS 2 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 27 A | 27 A | - |
| Rds On Drain Source Resistance | 25 mOhms | 25 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 18 nC | 24 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 58 W | 58 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | OptiMOS 2 | - | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 30 S | 15 S | - |
| Fall Time | 4 ns | 4 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 21 ns | 21 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 17 ns | 17 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Part # Aliases | G IPD33CN10N SP001127812 | G IPD33CN10N IPD33CN10NGXT SP000096458 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Type | - | 1 N-Channel | - |