IMB3AT110 vs IMB3A vs IMB3A T110 SOT163-B3

 
PartNumberIMB3AT110IMB3AIMB3A T110 SOT163-B3
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 100MA
ManufacturerROHM SemiconductorRohm Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationDualDual-
Transistor PolarityPNPPNP-
Typical Input Resistor4.7 kOhms4.7 kOhms-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-74-6--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max- 50 V--
Continuous Collector Current- 100 mA- 100 mA-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIMB3AIMB3A-
PackagingReelTape & Reel (TR)-
Emitter Base Voltage VEBO- 5 V--
Height1.1 mm--
Length2.9 mm--
Width1.6 mm--
BrandROHM Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesIMB3A--
Package Case-SC-74, SOT-457-
Mounting Type-Surface Mount-
Supplier Device Package-SMT6-
Power Max-300mW-
Transistor Type-2 PNP - Pre-Biased (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-4.7k-
Resistor Emitter Base R2 Ohms---
DC Current Gain hFE Min Ic Vce-100 @ 1mA, 5V-
Vce Saturation Max Ib Ic-300mV @ 2.5mA, 5mA-
Current Collector Cutoff Max---
Frequency Transition-250MHz-
Pd Power Dissipation-300 mW-
Collector Emitter Voltage VCEO Max-- 50 V-
Emitter Base Voltage VEBO-- 5 V-
DC Collector Base Gain hfe Min-100-
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