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| PartNumber | DMN3730UFB4-7B | DMN3730UFB4-7 | DMN3730UFB4-7(NF) |
| Description | MOSFET MOSFET BVDSS: 25V-30V | MOSFET 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | X2-DFN1006-3 | X2-DFN1006-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 910 mA | 730 mA | - |
| Rds On Drain Source Resistance | 460 mOhms | 460 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 8 V | 8 V | - |
| Qg Gate Charge | 1.6 nC | 1.6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 0.69 W | 690 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | 40 mS | 40 mS | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.8 ns | - | - |
| Factory Pack Quantity | 10000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 38 ns | - | - |
| Typical Turn On Delay Time | 3.5 ns | - | - |
| Unit Weight | 0.000035 oz | 0.000529 oz | - |
| RoHS | - | Y | - |
| Product | - | MOSFET Small Signal | - |
| Series | - | DMN37 | - |
| Transistor Type | - | 1 N-Channel | - |