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| PartNumber | DMN10H100SK3-13 | DMN10H120SE-13 | DMN10H120SE |
| Description | MOSFET 100V N-Ch Enh FET 100mOhm 3V | MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | SOT-223-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 18 A | 3.6 A | - |
| Rds On Drain Source Resistance | 100 mOhms | 110 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 10 V | - |
| Qg Gate Charge | 25.2 nC | 10 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 37 W | 2.1 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMN10 | DMN10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 7.3 ns | 2.5 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5.9 ns | 1.8 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | 11 ns | - |
| Typical Turn On Delay Time | 5.4 ns | 3.8 ns | - |
| Unit Weight | 0.139332 oz | 0.003951 oz | - |