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DMN10H100SK3-13

DMN10H100SK3-13
Mfr. #:
DMN10H100SK3-13
Produttore:
Diodes Incorporated
Descrizione:
MOSFET 100V N-Ch Enh FET 100mOhm 3V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
DMN10H100SK3-13 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
DMN10H100SK3-13 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Diodi incorporati
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
18 A
Rds On - Resistenza Drain-Source:
100 mOhms
Vgs th - Tensione di soglia gate-source:
1 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
25.2 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
37 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Serie:
DMN10
Tipo di transistor:
1 N-Channel
Marca:
Diodi incorporati
Tempo di caduta:
7.3 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
5.9 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
20 ns
Tempo di ritardo di accensione tipico:
5.4 ns
Unità di peso:
0.139332 oz
Tags
DMN10H1, DMN10H, DMN10, DMN1, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet, N-Ch, 100V, 18A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN10H100SK3-13
***ical
Trans MOSFET N-CH 100V 18A 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
100V N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS
***ment14 APAC
MOSFET, N-CH, 100V, 18A, TO-252;
***icontronic
Power Field-Effect Transistor, 14A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***et
MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
***ark
Mosfet, N-Ch, 100V, 17A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN10H099SK3-13
***ical
Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) DPAK T/R
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE MOSFET, 100 V, RoHS
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ure Electronics
MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
***ure Electronics
Single N-Channel 100 V 78 mOhm 8 nC OptiMOS™ Power Mosfet - TO-252-3
***icontronic
Power Field-Effect Transistor, 13A I(D), 100V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO252-3, RoHS
***ment14 APAC
MOSFET, N CH, 13A, 100V, PG-TO252-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):59mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; Current Id Max:13A; Power Dissipation Pd:31W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***i-Key
MOSFET N-CH 80V 19.6A DPAK
***ser
MOSFETs 80V N-Channel QFET
***ponent Stockers USA
20 A 100 V 0.055 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***ser
MOSFETs 20a, 100V, 0.054 Ohm Logic Level N-Ch
***Yang
PWR MOS ULTRAFET 100V/20A/0.055 OHMS N-CH LL TO-252AA - Bulk
***ponent Stockers USA
18 A 100 V 0.089 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***ser
MOSFETs 18a, 100V, 0.087 Ohm Logic Level N-Ch
***i-Key Marketplace
MOSFET N-CH 100V 18A TO252AA
***ponent Stockers USA
18 A 100 V 0.089 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***Yang
MOSFET 18a 100V 0.087 Ohm Logic Level N-Ch - Bulk
***SIT Distribution GmbH
Power Field-Effect Transistor, 18A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Diodes Inc. DMNxx MOSFETs
Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.
Parte # Mfg. Descrizione Azione Prezzo
DMN10H100SK3-13
DISTI # DMN10H100SK3-13DICT-ND		Diodes IncorporatedMOSFET N-CH 100V 18A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4556In Stock
  • 1000:$0.3444
  • 500:$0.4305
  • 100:$0.5812
  • 10:$0.7530
  • 1:$0.8600
DMN10H100SK3-13
DISTI # DMN10H100SK3-13DIDKR-ND		Diodes IncorporatedMOSFET N-CH 100V 18A TO252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4556In Stock
  • 1000:$0.3444
  • 500:$0.4305
  • 100:$0.5812
  • 10:$0.7530
  • 1:$0.8600
DMN10H100SK3-13
DISTI # DMN10H100SK3-13DITR-ND		Diodes IncorporatedMOSFET N-CH 100V 18A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.3030
DMN10H100SK3-13
DISTI # DMN10H100SK3-13		Diodes IncorporatedMOSFET BVDSS: 61V~100V TO252 T&R 2.5K - Tape and Reel (Alt: DMN10H100SK3-13)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.2329
  • 5000:$0.2219
  • 10000:$0.2119
  • 15000:$0.2019
  • 25000:$0.1969
DMN10H100SK3-13
DISTI # 621-DMN10H100SK3-13		Diodes IncorporatedMOSFET 100V N-Ch Enh FET 100mOhm 3V
RoHS: Compliant		8771
  • 1:$0.7100
  • 10:$0.5890
  • 100:$0.3800
  • 1000:$0.3040
DMN10H100SK3-13Diodes IncorporatedMOSFET N-CH 100V 18A TO252 (DMN10H100SK3-13)4605
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    Disponibilità
    Azione:
    Available
    Su ordine:
    1991
    Inserisci la quantità:
    Il prezzo attuale di DMN10H100SK3-13 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,71 USD
    0,71 USD
    10
    0,59 USD
    5,89 USD
    100
    0,38 USD
    38,00 USD
    1000
    0,30 USD
    304,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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