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| PartNumber | DMG4511SK4-13 | DMG4511SK3-13 | DMG4511SK4-7 |
| Description | MOSFET MOSFET BVDSS: 31V-40 V-40V,TO252,2.5K | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 35 V | - | - |
| Id Continuous Drain Current | 5.3 A, 5 A | - | - |
| Rds On Drain Source Resistance | 65 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.54 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMG4511 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 4.5 S | - | - |
| Fall Time | 35.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.8 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33.2 ns | - | - |
| Typical Turn On Delay Time | 5.4 ns | - | - |