C2M0025120D vs C2M0025120 vs C2M0040120

 
PartNumberC2M0025120DC2M0025120C2M0040120
DescriptionMOSFET SIC MOSFET 1200V RDS ON 25 mOhm
ManufacturerCree, Inc.-CREE
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySiC--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1.2 kV--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance25 mOhms--
Vgs th Gate Source Threshold Voltage2.4 V--
Vgs Gate Source Voltage25 V, - 10 V--
Qg Gate Charge406 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation463 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube-Tube
Height21.1 mm--
Length5.21 mm--
ProductPower MOSFET--
Transistor Type1 N-Channel--
TypeSilicon Carbide Power MOSFET--
Width16.13 mm--
BrandWolfspeed / Cree--
Forward Transconductance Min23.6 S--
Fall Time28.4 ns--
Product TypeMOSFET--
Rise Time31.6 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time28.8 ns--
Typical Turn On Delay Time14.4 ns--
Unit Weight1.340411 oz--
Series--Z-FET
Package Case--TO-247-3
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Through Hole
Supplier Device Package--TO-247-3
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--330W
Drain to Source Voltage Vdss--1200V (1.2kV)
Input Capacitance Ciss Vds--1893pF @ 1000V
FET Feature--Silicon Carbide (SiC)
Current Continuous Drain Id 25°C--60A (Tc)
Rds On Max Id Vgs--52 mOhm @ 40A, 20V
Vgs th Max Id--2.8V @ 10mA
Gate Charge Qg Vgs--115nC @ 20V
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