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| PartNumber | BFP 720FESD H6327 | BFP720FESDH6327XTSA1 | BFP 720F E6327 |
| Description | RF Bipolar Transistors RF BIP TRANSISTORS | RF Bipolar Transistors RF BIP TRANSISTORS | RF Bipolar Transistors RF BIP TRANSISTORS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | RF Bipolar Transistors |
| RoHS | Y | - | Y |
| Series | BFP720 | - | - |
| Transistor Type | Bipolar | - | Bipolar |
| Technology | SiGe | Si | SiGe |
| Collector Emitter Voltage VCEO Max | 4.2 V | - | 4 V |
| Continuous Collector Current | 30 mA | - | 25 mA |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TSFP-4-1 | TSFP-4 | - |
| Packaging | Reel | Reel | Reel |
| Collector Base Voltage VCBO | 4.9 V | - | 13 V |
| DC Current Gain hFE Max | 400 | - | 400 |
| Operating Frequency | 43 GHz | - | 45 GHz |
| Type | RF Silicon Germanium | - | RF Silicon Germanium |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Pd Power Dissipation | 100 mW | - | 100 mW |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | RF Bipolar Transistors |
| Factory Pack Quantity | 3000 | - | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | BFP720FESDH6327XTSA1 BFP72FESDH6327XT SP000853562 | 720FESD BFP BFP72FESDH6327XT H6327 SP000853562 | BFP720FE6327XT |
| Emitter Base Voltage VEBO | - | - | 1.2 V |
| Height | - | - | 0.55 mm |
| Length | - | - | 1.4 mm |
| Width | - | - | 0.8 mm |