BFP 720FESD H6327

BFP 720FESD H6327
Mfr. #:
BFP 720FESD H6327
Produttore:
Infineon Technologies
Descrizione:
RF Bipolar Transistors RF BIP TRANSISTORS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BFP 720FESD H6327 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
BFP 720FESD H6327 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor bipolari RF
RoHS:
Y
Serie:
BFP720
Tipo di transistor:
Bipolare
Tecnologia:
SiGe
Tensione collettore-emettitore VCEO Max:
4.2 V
Corrente continua del collettore:
30 mA
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TSFP-4-1
Confezione:
Bobina
Collettore-tensione di base VCBO:
4.9 V
Guadagno di corrente CC hFE Max:
400
Frequenza operativa:
43 GHz
Tipo:
RF silicio germanio
Marca:
Tecnologie Infineon
Pd - Dissipazione di potenza:
100 mW
Tipologia di prodotto:
Transistor bipolari RF
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Parte # Alias:
BFP720FESDH6327XTSA1 BFP72FESDH6327XT SP000853562
Tags
BFP720FESDH, BFP720FES, BFP720FE, BFP720F, BFP72, BFP7, BFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF Transistors
Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.
RF Solutions
Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.
Parte # Mfg. Descrizione Azione Prezzo
BFP720FESDH6327XTSA1
DISTI # 32628695
Infineon Technologies AGTrans RF BJT NPN 4.2V 0.03A Automotive 4-Pin TSFP T/R
RoHS: Compliant
210000
  • 3000:$0.2040
BFP720FESDH6327XTSA1
DISTI # BFP720FESDH6327XTSA1TR-ND
Infineon Technologies AGRF TRANS NPN 4.7V 45GHZ 4TSFP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.1879
BFP720FESDH6327XTSA1
DISTI # V36:1790_06384756
Infineon Technologies AGTrans RF BJT NPN 4.2V 0.03A Automotive 4-Pin TSFP T/R
RoHS: Compliant
0
    BFP720FESDH6327XTSA1
    DISTI # BFP720FESDH6327XTSA1
    Infineon Technologies AGTrans GP BJT NPN 4.2V 0.03A 4-Pin TSFP T/R - Tape and Reel (Alt: BFP720FESDH6327XTSA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.1739
    • 6000:$0.1679
    • 12000:$0.1619
    • 18000:$0.1559
    • 30000:$0.1539
    BFP720FESDH6327XTSA1
    DISTI # SP000853562
    Infineon Technologies AGTrans GP BJT NPN 4.2V 0.03A 4-Pin TSFP T/R (Alt: SP000853562)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€0.2489
    • 6000:€0.2039
    • 12000:€0.1869
    • 18000:€0.1719
    • 30000:€0.1599
    BFP 720FESD H6327
    DISTI # 726-BFP720FESDH6327
    Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
    RoHS: Compliant
    0
    • 1:$0.5300
    • 10:$0.4380
    • 100:$0.2670
    • 1000:$0.2070
    • 3000:$0.1760
    Immagine Parte # Descrizione
    BFP 720F H6327

    Mfr.#: BFP 720F H6327

    OMO.#: OMO-BFP-720F-H6327

    RF Bipolar Transistors RF BIP TRANSISTOR
    BFP 720FESD H6327

    Mfr.#: BFP 720FESD H6327

    OMO.#: OMO-BFP-720FESD-H6327

    RF Bipolar Transistors RF BIP TRANSISTORS
    BFP 720F E6327

    Mfr.#: BFP 720F E6327

    OMO.#: OMO-BFP-720F-E6327

    RF Bipolar Transistors RF BIP TRANSISTORS
    BFP 720F E6327

    Mfr.#: BFP 720F E6327

    OMO.#: OMO-BFP-720F-E6327-INFINEON-TECHNOLOGIES

    RF TRANS NPN 4.7V 45GHZ 4TSFP
    BFP 720FESD E6327

    Mfr.#: BFP 720FESD E6327

    OMO.#: OMO-BFP-720FESD-E6327-INFINEON-TECHNOLOGIES

    RF TRANS NPN 4.7V 45GHZ 4TSFP
    BFP 720FESD H6327

    Mfr.#: BFP 720FESD H6327

    OMO.#: OMO-BFP-720FESD-H6327-317

    RF Bipolar Transistors RF BIP TRANSISTORS
    BFP 720F H6327

    Mfr.#: BFP 720F H6327

    OMO.#: OMO-BFP-720F-H6327-317

    RF Bipolar Transistors RF BIP TRANSISTOR
    Disponibilità
    Azione:
    Available
    Su ordine:
    4000
    Inserisci la quantità:
    Il prezzo attuale di BFP 720FESD H6327 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,53 USD
    0,53 USD
    10
    0,44 USD
    4,38 USD
    100
    0,27 USD
    26,70 USD
    1000
    0,21 USD
    207,00 USD
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