 |  | | |
| PartNumber | BFG 196 E6327 | BFG196 | BFG196 E6327 SOT223 |
| Description | Bipolar Transistors - BJT NPN Silicon RF TRANSISTOR | ||
| Manufacturer | Infineon | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 12 V | - | - |
| Collector Base Voltage VCBO | 20 V | - | - |
| Emitter Base Voltage VEBO | 2 V | - | - |
| Maximum DC Collector Current | 0.15 A | - | - |
| Gain Bandwidth Product fT | 7500 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Packaging | Reel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Continuous Collector Current | 0.15 A | - | - |
| Pd Power Dissipation | 800 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | - | - |