 | | | |
| PartNumber | APTGT200A120G | APTGT200A120D3G | APTGT200A120D3 |
| Description | IGBT Modules CC6105 | IGBT Modules DOR CC7014 | |
| Manufacturer | Microchip | Microchip | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | - |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | - |
| Continuous Collector Current at 25 C | 280 A | 300 A | - |
| Gate Emitter Leakage Current | 500 nA | 400 nA | - |
| Pd Power Dissipation | 890 W | 1.05 kW | - |
| Package / Case | SP6 | D3-11 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 100 C | + 125 C | - |
| Packaging | Tube | Bulk | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 3.880136 oz | - | - |