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APTGT200A120D3G

APTGT200A120D3G
Mfr. #:
APTGT200A120D3G
Produttore:
Microchip / Microsemi
Descrizione:
IGBT Modules DOR CC7014
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
APTGT200A120D3G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Microchip
Categoria di prodotto:
Moduli IGBT
RoHS:
Y
Prodotto:
Moduli di silicio IGBT
Configurazione:
Dual
Tensione collettore-emettitore VCEO Max:
1.2 kV
Tensione di saturazione collettore-emettitore:
1.7 V
Corrente continua del collettore a 25 C:
300 A
Corrente di dispersione gate-emettitore:
400 nA
Pd - Dissipazione di potenza:
1.05 kW
Pacchetto/custodia:
D3-11
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 125 C
Confezione:
Massa
Marca:
Microchip / Microsemi
Stile di montaggio:
Montaggio su telaio
Tensione massima dell'emettitore di gate:
20 V
Tipologia di prodotto:
Moduli IGBT
Quantità confezione di fabbrica:
1
sottocategoria:
IGBT
Tags
APTGT200A12, APTGT200A1, APTGT200A, APTGT200, APTGT20, APTGT2, APTGT, APTG, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
***ark
Pm-Igbt-Tfs-D3 D3 Box Rohs Compliant: Yes |Microchip APTGT200A120D3G
***el Electronic
Trans IGBT Module N-CH 1.2KV 300A 7-Pin Case D-3
***rochip SCT
High Voltage Power Module, Phase leg, 1200V, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IGBT MODULE TRENCH PHASE LEG D3
***el Electronic
Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
*** Electronic Components
IGBT Modules 1200V 200A SINGLE
***trelec
IGBT module Connection: 2 x M6, 3 x M4 Fastening: 4 x M6 Configuration: Single Housing type: 62 mm Collector-emitter saturation voltage: 3.1 V
***el Electronic
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
***ronik
IGBT-Mod. 150A 1200V 2,5kV 62mm
***trelec
IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 17 mJ Energy dissipation during turn-off time: 18 mJ
***ical
Trans IGBT Module N-CH 1200V 275A 1400000mW 7-Pin 62MM Tray
*** Electronics
IGBT Array & Module Transistor, N Channel, 275 A, 3.2 V, 1.4 kW, 1.2 kV, Module
***ark
Igbt, Module, N-Ch, 1.2Kv, 275A; Transistor Polarity:N Channel; Dc Collector Current:275A; Collector Emitter Saturation Voltage Vce(On):3.2V; Power Dissipation Pd:1.4Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes |Infineon FF200R12KS4HOSA1
***ineon
Our well-known 62 mm 1200V dual IGBT modules with the fast IGBT2 for high-frequency switching are the right choice for your design. | Summary of Features: High Short Circuit Capability; Self Limiting Short Circuit Current; Low Switching Losses; Unbeatable Robustness; V(CEsat) with positive Temperature Coefficient; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Copper Base Plate; Standard Housing | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Chip N-CH 1200V 215A 625000mW 4-Pin SOT-227 Tube
***ure Electronics
APT150GNxx Series 1200 V 215 A 55 ns Chassis Mount IGBT - ISOTOP
***rochip
IGBT Fieldstop Low Frequency Combi 1200 V 150 A SOT-227
***ical
Trans IGBT Chip N-CH 1200V 215A 625000mW 4-Pin SOT-227 Tube
***rochip
IGBT Fieldstop Low Frequency Single 1200 V 150 A SOT-227
***ure Electronics
APT150GN120J Series 1200 V 215 A Trench Field Stop IGBT Module - ISOTOP®
***ical
Trans IGBT Module N-CH 1200V 220A 690000mW 7-Pin Case SP-6 Tube
***ark
Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT150DU120G
*** Stop Electro
Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Dual common source, 1200V, RoHS
***i-Key
POWER MOD IGBT TRENCH DL SRC SP6
Parte # Mfg. Descrizione Azione Prezzo
APTGT200A120D3G
DISTI # APTGT200A120D3G		Microchip Technology IncTrans IGBT Module N-CH 1.2KV 300A 7-Pin Case D3 - Boxed Product (Development Kits) (Alt: APTGT200A120D3G)
RoHS: Compliant
Min Qty: 100
Container: Box		Americas - 0
  • 1000:$136.9900
  • 500:$139.1900
  • 300:$143.5900
  • 200:$148.2900
  • 100:$153.3900
APTGT200A120D3G
DISTI # 494-APTGT200A120D3G		Microchip Technology IncIGBT Modules Power Module - IGBT
RoHS: Compliant		0
  • 100:$137.3900
Immagine Parte # Descrizione
APTGT200A120G

Mfr.#: APTGT200A120G

OMO.#: OMO-APTGT200A120G

 IGBT Modules CC6105
APTGT200DU60TG

Mfr.#: APTGT200DU60TG

OMO.#: OMO-APTGT200DU60TG

 IGBT Modules DOR CC4135
APTGT200SK120G

Mfr.#: APTGT200SK120G

OMO.#: OMO-APTGT200SK120G

 IGBT Modules DOR CC6160
APTGT200DA120G

Mfr.#: APTGT200DA120G

OMO.#: OMO-APTGT200DA120G

 IGBT Modules DOR CC6109
APTGT200DH60G

Mfr.#: APTGT200DH60G

OMO.#: OMO-APTGT200DH60G

 IGBT Modules DOR CC6114
APTGT200DU120G

Mfr.#: APTGT200DU120G

OMO.#: OMO-APTGT200DU120G

 IGBT Modules CC6074
APTGT200A120D3G

Mfr.#: APTGT200A120D3G

OMO.#: OMO-APTGT200A120D3G

 IGBT Modules DOR CC7014
APTGT200TL60G

Mfr.#: APTGT200TL60G

OMO.#: OMO-APTGT200TL60G

 IGBT Modules DOR CC6178
APTGT200A120D3

Mfr.#: APTGT200A120D3

OMO.#: OMO-APTGT200A120D3-1190

 Nuovo e originale
APTGT200A120G

Mfr.#: APTGT200A120G

OMO.#: OMO-APTGT200A120G-MICROSEMI

 Trans IGBT Module N-CH 1.2KV 280A 7-Pin Case SP-6
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di APTGT200A120D3G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
100
162,02 USD
16 202,00 USD
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