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| PartNumber | A2T21H360-24SR6 | A2T21H360-23NR6 | A2T21H360-23N |
| Description | RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V | RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V | |
| Manufacturer | NXP | NXP | - |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Packaging | Reel | Reel | - |
| Brand | NXP / Freescale | NXP Semiconductors | - |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
| Factory Pack Quantity | 150 | 150 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | 935318247128 | 935322358528 | - |
| Unit Weight | 0.303504 oz | 0.186807 oz | - |
| Transistor Polarity | - | Dual N-Channel | - |
| Id Continuous Drain Current | - | 2.4 A | - |
| Vds Drain Source Breakdown Voltage | - | - 500 mV, 5 V | - |
| Gain | - | 16.8 dB | - |
| Output Power | - | 63 W | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | OM-1230-4 | - |
| Operating Frequency | - | 2110 MHz to 2200 MHz | - |
| Type | - | RF Power MOSFET | - |
| Number of Channels | - | 2 Channel | - |
| Moisture Sensitive | - | Yes | - |
| Vgs Gate Source Voltage | - | - 6 V, 10 V | - |
| Vgs th Gate Source Threshold Voltage | - | 0.8 V | - |