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| PartNumber | 2SA2120-O(Q) | 2SA2121 | 2SA2120-R(Q) |
| Description | Bipolar Transistors - BJT Transistor PNP 200V 12A | Bipolar Transistors - BJT Transistor PNP 200V 12A | |
| Manufacturer | Toshiba | TOSHIBA | Toshiba |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-3P-3 | - | - |
| Transistor Polarity | PNP | - | PNP |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 200 V | - | - |
| Collector Base Voltage VCBO | 200 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 12 A | - | 12 A |
| Gain Bandwidth Product fT | 25 MHz | - | 25 MHz (Typ) |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | 2SA2120 | - | - |
| Height | 19 mm | - | - |
| Length | 15.9 mm | - | - |
| Width | 4.8 mm | - | - |
| Brand | Toshiba | - | - |
| DC Collector/Base Gain hfe Min | 80 at 1 A, 5 V | - | - |
| Pd Power Dissipation | 200000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.238311 oz | - | 0.238311 oz |
| Package Case | - | - | TO-3P |
| Pd Power Dissipation | - | - | 200000 mW |
| Collector Emitter Voltage VCEO Max | - | - | 200 V |
| Collector Base Voltage VCBO | - | - | 200 V |
| Emitter Base Voltage VEBO | - | - | 5 V |
| DC Collector Base Gain hfe Min | - | - | 55 at 1 A at 5 V |