2N6052G vs 2N6052 vs 2N6052-JQR-B

 
PartNumber2N6052G2N60522N6052-JQR-B
DescriptionDarlington Transistors 12A 100V Bipolar Power PNPDarlington Transistors PNP Pwr DarlingtonBipolar Transistors - BJT BIPOLAR POWER TRANSISTOR
ManufacturerON SemiconductorCentral Semiconductor-
Product CategoryDarlington TransistorsDarlington Transistors-
RoHSYY-
ConfigurationSingleSingle-
Transistor PolarityPNPPNP-
Collector Emitter Voltage VCEO Max100 V100 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Base Voltage VCBO100 V100 V-
Maximum DC Collector Current12 A12 A-
Maximum Collector Cut off Current1000 uA--
Pd Power Dissipation150 W150 W-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-204-2 (TO-3)TO-3-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 200 C-
Series2N60522N6052-
PackagingTrayTube-
DC Current Gain hFE Max18000--
Height8.51 mm11.43 mm-
Length39.37 mm39.36 mm-
Width26.67 mm26.67 mm-
BrandON SemiconductorCentral Semiconductor-
Continuous Collector Current12 A12 A-
DC Collector/Base Gain hfe Min100, 750750-
Product TypeDarlington TransistorsDarlington Transistors-
Factory Pack Quantity10020-
SubcategoryTransistorsTransistors-
Unit Weight0.423993 oz0.225789 oz-
Operating Temperature Range-- 65 C to + 200 C-
Part # Aliases-2N6052 PBFREE-
Top