 |  | | |
| PartNumber | 2N5655 | 2N5655G | 2N5654 |
| Description | Bipolar Transistors - BJT . . | Bipolar Transistors - BJT 1A 250V 20W NPN | SMALL SIGNAL, FET |
| Manufacturer | Central Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Package / Case | TO-126 | TO-225-3 | - |
| Series | 2N5655 | 2N5655 | - |
| Packaging | Bulk | Bulk | - |
| Brand | Central Semiconductor | ON Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 500 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 2N5655 PBFREE | - | - |
| Mounting Style | - | Through Hole | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 250 V | - |
| Collector Base Voltage VCBO | - | 275 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| Collector Emitter Saturation Voltage | - | 1 V | - |
| Maximum DC Collector Current | - | 0.5 A | - |
| Gain Bandwidth Product fT | - | 10 MHz | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Height | - | 11.04 mm (Max) | - |
| Length | - | 7.74 mm (Max) | - |
| Width | - | 2.66 mm (Max) | - |
| Continuous Collector Current | - | 0.5 A | - |
| DC Collector/Base Gain hfe Min | - | 30 | - |
| Pd Power Dissipation | - | 20 W | - |
| Unit Weight | - | 0.021200 oz | - |