T2G6003028-FS

T2G6003028-FS
Mfr. #:
T2G6003028-FS
Produttore:
Qorvo
Descrizione:
RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flangeless
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
T2G6003028-FS Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
T2G6003028-FS maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
TriQuint (Qorvo)
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
T2G
Confezione
Vassoio
Alias ​​parziali
1100021
Tecnologia
GaN SiC
Tipo a transistor
HEMT
Tags
T2G6003028-FS, T2G6003028-F, T2G6003, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descrizione Azione Prezzo
T2G6003028-FS
DISTI # 772-T2G6003028-FS
QorvoRF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flangeless
RoHS: Compliant
146
  • 1:$141.0000
  • 25:$121.9500
T2G6003028-FS EVAL BOARD
DISTI # 772-T2G6003028-FSEB
QorvoRF Development Tools DC-6.0GHz 30 Watt 28V GaN FS Eval Brd
RoHS: Compliant
0
  • 1:$875.0000
Immagine Parte # Descrizione
T2G6000528-Q3

Mfr.#: T2G6000528-Q3

OMO.#: OMO-T2G6000528-Q3

RF JFET Transistors DC-6GHz 28V P3dB 10W @3.3GHz
T2G6001528-SG

Mfr.#: T2G6001528-SG

OMO.#: OMO-T2G6001528-SG

RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
T2G6003028-FS

Mfr.#: T2G6003028-FS

OMO.#: OMO-T2G6003028-FS

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flangeless
T2G6000528-Q3 28V

Mfr.#: T2G6000528-Q3 28V

OMO.#: OMO-T2G6000528-Q3-28V

RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
T2G6000528-Q3 28V

Mfr.#: T2G6000528-Q3 28V

OMO.#: OMO-T2G6000528-Q3-28V-318

RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
T2G6001528-SG

Mfr.#: T2G6001528-SG

OMO.#: OMO-T2G6001528-SG-318

RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
T2G6001528-SG-EVB

Mfr.#: T2G6001528-SG-EVB

OMO.#: OMO-T2G6001528-SG-EVB-1152

RF Development Tools
T2G6000528-Q3-EVB3 3.0-3

Mfr.#: T2G6000528-Q3-EVB3 3.0-3

OMO.#: OMO-T2G6000528-Q3-EVB3-3-0-3-1190

Nuovo e originale
T2G6001528-Q3,EVB1 5-6GH

Mfr.#: T2G6001528-Q3,EVB1 5-6GH

OMO.#: OMO-T2G6001528-Q3-EVB1-5-6GH-1190

Nuovo e originale
T2G6003028-FS-EVB1

Mfr.#: T2G6003028-FS-EVB1

OMO.#: OMO-T2G6003028-FS-EVB1-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
5000
Inserisci la quantità:
Il prezzo attuale di T2G6003028-FS è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
182,92 USD
182,92 USD
10
173,78 USD
1 737,79 USD
100
164,63 USD
16 463,25 USD
500
155,49 USD
77 743,15 USD
1000
146,34 USD
146 340,00 USD
Iniziare con
Top