OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

SIHD240N60E-GE3

SIHD240N60E-GE3
Mfr. #:
SIHD240N60E-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 600V Vds; +/-30V Vgs DPAK (TO-252)
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIHD240N60E-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD240N60E-GE3 DatasheetSIHD240N60E-GE3 Datasheet (P4-P6)SIHD240N60E-GE3 Datasheet (P7)
ECAD Model:
Maggiori informazioni:
SIHD240N60E-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
600 V
Id - Corrente di scarico continua:
12 A
Rds On - Resistenza Drain-Source:
240 mOhms
Vgs th - Tensione di soglia gate-source:
3 V
Vgs - Tensione Gate-Source:
30 V
Qg - Carica cancello:
23 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
78 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Bobina
Serie:
E
Tipo di transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
4 S
Tempo di caduta:
14 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
14 ns
Quantità confezione di fabbrica:
2000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
26 ns
Tempo di ritardo di accensione tipico:
15 ns
Tags
SIHD2, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descrizione Azione Prezzo
SIHD240N60E-GE3
DISTI # V99:2348_22587815		Vishay IntertechnologiesE Series Power MOSFET DPAK (TO-252), 240 m @ 10V0
    SIHD240N60E-GE3
    DISTI # SIHD240N60E-GE3-ND    		Vishay SiliconixMOSFET N-CHAN 600V DPAK TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		2926In Stock
    • 6000:$1.1522
    • 3000:$1.1666
    • 500:$1.5123
    • 100:$1.8406
    • 25:$2.1604
    • 10:$2.2900
    • 1:$2.5500
    SIHD240N60E-GE3
    DISTI # SIHD240N60E-GE3    		Vishay Intertechnologies- Tape and Reel (Alt: SIHD240N60E-GE3)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel    		Americas - 0
    • 20000:$1.0549
    • 12000:$1.0839
    • 8000:$1.1149
    • 4000:$1.1619
    • 2000:$1.1969
    SIHD240N60E-GE3
    DISTI # 07AH6939    		Vishay IntertechnologiesMOSFET, N-CH, 12A, 600V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.208ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes50
    • 500:$1.4500
    • 250:$1.5600
    • 100:$1.6600
    • 50:$1.8200
    • 25:$1.9800
    • 10:$2.1400
    • 1:$2.5800
    SIHD240N60E-GE3
    DISTI # 78-SIHD240N60E-GE3    		Vishay IntertechnologiesMOSFET 600V Vds,+/-30V Vgs DPAK (TO-252)
    RoHS: Compliant    		2998
    • 1:$2.5500
    • 10:$2.1200
    • 100:$1.6400
    • 500:$1.4400
    • 1000:$1.1900
    • 2000:$1.1100
    SIHD240N60E-GE3
    DISTI # 3019082    		Vishay IntertechnologiesMOSFET, N-CH, 12A, 600V, TO-25250
    • 500:£0.9500
    • 250:£1.0100
    • 100:£1.0700
    • 10:£1.2900
    • 1:£1.6900
    SIHD240N60E-GE3
    DISTI # 3019082    		Vishay IntertechnologiesMOSFET, N-CH, 12A, 600V, TO-252
    RoHS: Compliant    		50
    • 1000:$1.4600
    • 500:$1.5400
    • 250:$1.6300
    • 100:$1.7300
    • 10:$2.0800
    • 1:$2.7300
    Immagine Parte # Descrizione
    NVB110N65S3F

    Mfr.#: NVB110N65S3F

    OMO.#: OMO-NVB110N65S3F

    		 MOSFET SUPERFET3 650V D2PAK PKG
    FCD260N65S3

    Mfr.#: FCD260N65S3

    OMO.#: OMO-FCD260N65S3

    		 MOSFET SUPERFET3 260MOHM TO252
    0ADHC0440-BE

    Mfr.#: 0ADHC0440-BE

    OMO.#: OMO-0ADHC0440-BE

    		 Cartridge Fuses FUSE, CERAMIC TUBE 0.44A 1000VAC1000VDC
    105017-0001

    Mfr.#: 105017-0001

    OMO.#: OMO-105017-0001-1190

    		 MICRO USB, 2.0 TYPE B, RECEPTACLE, SMT, USB Connector Type:Micro USB Type B, USB Standard:USB 2.0, Gender:Receptacle, No. of Positions:5Positions, Connector Mounting:Surface Mount, Orientation:R
    FCD260N65S3

    Mfr.#: FCD260N65S3

    OMO.#: OMO-FCD260N65S3-ON-SEMICONDUCTOR

    		 MOSFET N-CH 260MOHM TO252
    NVB110N65S3F

    Mfr.#: NVB110N65S3F

    OMO.#: OMO-NVB110N65S3F-ON-SEMICONDUCTOR

    		 SUPERFET3 650V D2PAK PKG
    F971D106MCCHT3

    Mfr.#: F971D106MCCHT3

    OMO.#: OMO-F971D106MCCHT3-AVX

    		 CAP, TANT, AEC-Q200, 10UF, 20V, CASE C
    1473005-4

    Mfr.#: 1473005-4

    OMO.#: OMO-1473005-4-TE-CONNECTIVITY

    		 IC & Component Sockets DDR2 SADIMM 200P STANDARD HOUSING
    Disponibilità
    Azione:
    Available
    Su ordine:
    1985
    Inserisci la quantità:
    Il prezzo attuale di SIHD240N60E-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,55 USD
    2,55 USD
    10
    2,12 USD
    21,20 USD
    100
    1,64 USD
    164,00 USD
    500
    1,44 USD
    720,00 USD
    1000
    1,19 USD
    1 190,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
    Iniziare con
    Prodotti più recenti
    • SUM70101EL 100 V P-Channel MOSFET
      SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • SIRA20DP TrenchFET® Gen IV MOSFET
      SIRA20DP TrenchFET® Gen IV MOSFET
      Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
    • P-Channel MOSFETs
      P-Channel MOSFETs
      Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
    • Compare SIHD240N60E-GE3
      Compare SIHD240N60E-GE3
      SIHD240N60EGE3 vs SIHD2N80AEGE3 vs SIHD2N80EGE3
    • SiP32452, SiP32453 Load Switch
      SiP32452, SiP32453 Load Switch
      Vishay's load switches have a low input logic control threshold and a fast turn on time.
    • PowerPAIR®
      PowerPAIR®
      Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
    More Newest Products
    Top