FDB8441

FDB8441
Mfr. #:
FDB8441
Produttore:
ON Semiconductor
Descrizione:
MOSFET N-CH 40V 80A D2PAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDB8441 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FDB8441 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
FSC
categoria di prodotto
FET - Single
Serie
PowerTrenchR
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.046296 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Tecnologia
si
Temperatura di esercizio
-55°C ~ 175°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
D2PAK
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
300W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
40V
Ingresso-Capacità-Ciss-Vds
15000pF @ 25V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
28A (Ta), 80A (Tc)
Rds-On-Max-Id-Vgs
2.5 mOhm @ 80A, 10V
Vgs-th-Max-Id
4V @ 250μA
Gate-Carica-Qg-Vgs
280nC @ 10V
Pd-Power-Dissipazione
300 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
17.9 ns
Ora di alzarsi
24 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
80 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Rds-On-Drain-Source-Resistenza
1.9 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
75 ns
Tempo di ritardo all'accensione tipico
23 ns
Modalità canale
Aumento
Tags
FDB8441, FDB844, FDB84, FDB8, FDB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R
***Semiconductor
N-Channel PowerTrench® MOSFET 40V, 80A, 2.5mΩ
***ure Electronics
N-Channel 40 V 120 A 2.5 mohm Surface Mount PowerTrench® Mosfet - TO-263AB
***ser
MOSFETs 40V N-Channel PowerTrench MOSFET
***Components
MOSFET N-CHANNEL 40V 80A D2PAK
***i-Key
MOSFET N-CH 40V 80A D2PAK
***inecomponents.com
40V,80A,2.5 OHMS,NCH POWER TRENCH MOSFET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:28A; On Resistance, Rds(on):0.0019ohm; Rds(on) Test Voltage, Vgs:2.8V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
***nell
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:28A; Resistance, Rds On:0.0019ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.8V; Case Style:D2-PAK; Termination Type:SMD; Operating Temperature Range:-55°C to +175°C; Alternate Case Style:TO-263; Current, Idm Pulse:70A; Pin Format:G,D,S; Power Dissipation:300W; Power, Pd:300W; SMD Marking:FDB8441; Temperature, Tj Max:175°C; Time, Fall:17.9ns; Time, Rise:24ns; Time, trr Typ:52ns; Transistors, No. of:1; Typ Capacitance Ciss:15000pF; Voltage, Rds Measurement:10V; Voltage, Vds Max:40V; Voltage, Vgs th Max:4V
***ment14 APAC
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-263; Capacitance Ciss Typ:15000pF; Current Id Max:28A; Fall Time tf:17.9ns; Junction Temperature Tj Max:175°C; No. of Transistors:1; Package / Case:D2-PAK; Pin Format:G,D,S; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:52ns; Rise Time:24ns; SMD Marking:FDB8441; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descrizione Azione Prezzo
FDB8441
DISTI # V79:2366_17791647
ON Semiconductor40V,80A,2.5 OHMS,NCH POWER TRE37
  • 2400:$1.4903
  • 1600:$1.5413
  • 800:$1.5688
  • 100:$2.1742
  • 10:$2.5038
  • 1:$3.2311
FDB8441
DISTI # V72:2272_06298528
ON Semiconductor40V,80A,2.5 OHMS,NCH POWER TRE0
    FDB8441
    DISTI # V36:1790_06298528
    ON Semiconductor40V,80A,2.5 OHMS,NCH POWER TRE0
    • 800000:$1.5620
    • 400000:$1.5640
    • 80000:$1.7060
    • 8000:$1.9370
    • 800:$1.9750
    FDB8441
    DISTI # FDB8441CT-ND
    ON SemiconductorMOSFET N-CH 40V 80A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    22687In Stock
    • 100:$2.3898
    • 10:$2.9170
    • 1:$3.2500
    FDB8441
    DISTI # FDB8441DKR-ND
    ON SemiconductorMOSFET N-CH 40V 80A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    22687In Stock
    • 100:$2.3898
    • 10:$2.9170
    • 1:$3.2500
    FDB8441
    DISTI # FDB8441TR-ND
    ON SemiconductorMOSFET N-CH 40V 80A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)
    22400In Stock
    • 5600:$1.5230
    • 2400:$1.5825
    • 1600:$1.6658
    • 800:$1.9752
    FDB8441-F085
    DISTI # FDB8441-F085TR-ND
    ON SemiconductorMOSFET N-CH 40V 80A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)
    Limited Supply - Call
      FDB8441-F085
      DISTI # FDB8441-F085CT-ND
      ON SemiconductorMOSFET N-CH 40V 80A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)
      Limited Supply - Call
        FDB8441-F085
        DISTI # FDB8441-F085DKR-ND
        ON SemiconductorMOSFET N-CH 40V 80A D2PAK
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®
        Limited Supply - Call
          FDB8441
          DISTI # 33791553
          ON Semiconductor40V,80A,2.5 OHMS,NCH POWER TRE800
          • 800:$1.3148
          FDB8441
          DISTI # 26117542
          ON Semiconductor40V,80A,2.5 OHMS,NCH POWER TRE37
          • 8:$3.2311
          FDB8441
          DISTI # FDB8441
          ON SemiconductorTrans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB8441)
          RoHS: Compliant
          Min Qty: 800
          Container: Tape and Reel
          Europe - 0
          • 8000:€1.0900
          • 4800:€1.1900
          • 3200:€1.2900
          • 1600:€1.3900
          • 800:€1.6900
          FDB8441
          DISTI # FDB8441
          ON SemiconductorTrans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB8441)
          RoHS: Compliant
          Min Qty: 800
          Container: Reel
          Americas - 0
          • 4800:$1.1900
          • 8000:$1.1900
          • 800:$1.2900
          • 1600:$1.2900
          • 3200:$1.2900
          FDB8441
          DISTI # FDB8441
          ON SemiconductorTrans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FDB8441)
          RoHS: Compliant
          Min Qty: 168
          Container: Bulk
          Americas - 0
          • 840:$1.7900
          • 1680:$1.7900
          • 168:$1.8900
          • 336:$1.8900
          • 504:$1.8900
          FDB8441
          DISTI # 20M1160
          ON SemiconductorMOSFET Transistor, N Channel, 28 A, 40 V, 1.9 mohm, 10 V, 2.8 V RoHS Compliant: Yes0
          • 9600:$1.3700
          • 2400:$1.4100
          • 800:$1.5400
          • 1:$1.5500
          FDB8441
          DISTI # 76M7874
          ON SemiconductorN CHANNEL MOSFET, 40V, 28A TO-263AB,Transistor Polarity:N Channel,Continuous Drain Current Id:28A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0019ohm,Rds(on) Test Voltage Vgs:2.8V,Threshold Voltage Vgs:20V RoHS Compliant: Yes0
          • 500:$1.7900
          • 250:$1.9900
          • 100:$2.0900
          • 50:$2.1900
          • 25:$2.3000
          • 10:$2.4000
          • 1:$2.8100
          FDB8441-F085
          DISTI # 48AC0891
          ON SemiconductorNMOS D2PAK 40V 2.5 MOHM / REEL0
            FDB8441
            DISTI # 512-FDB8441
            ON SemiconductorMOSFET 40V N-Channel PowerTrench MOSFET
            RoHS: Compliant
            2100
            • 1:$2.9900
            • 10:$2.5400
            • 100:$2.2000
            • 250:$2.0900
            • 500:$1.8800
            • 800:$1.5800
            • 2400:$1.5000
            • 4800:$1.4500
            FDB8441-F085
            DISTI # 512-FDB8441_F085
            ON SemiconductorMOSFET 40V N-Ch PowerTrench
            RoHS: Compliant
            568
            • 1:$2.9000
            • 10:$2.4700
            • 100:$1.9800
            • 500:$1.7300
            • 800:$1.4300
            • 2400:$1.3400
            • 4800:$1.2900
            FDB8441Fairchild Semiconductor CorporationPower Field-Effect Transistor, 28A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
            RoHS: Compliant
            850
            • 1000:$1.9600
            • 500:$2.0600
            • 100:$2.1500
            • 25:$2.2400
            • 1:$2.4100
            FDB8441Fairchild Semiconductor Corporation 556
              FDB8441
              DISTI # 1324784
              ON SemiconductorMOSFET, N, D2-PAK
              RoHS: Compliant
              0
              • 4800:$2.2400
              • 2400:$2.3100
              • 800:$2.4300
              • 500:$2.8900
              • 250:$3.2200
              • 100:$3.3900
              • 10:$3.9100
              • 1:$4.6100
              Immagine Parte # Descrizione
              FDB024N06

              Mfr.#: FDB024N06

              OMO.#: OMO-FDB024N06

              MOSFET 60V N-Channel PowerTrench
              FDB029N06

              Mfr.#: FDB029N06

              OMO.#: OMO-FDB029N06

              MOSFET NCH 60V 2.9Mohm
              FDB8874

              Mfr.#: FDB8874

              OMO.#: OMO-FDB8874

              MOSFET 30V N-Channel PowerTrench
              FDB42AN15A0-F085

              Mfr.#: FDB42AN15A0-F085

              OMO.#: OMO-FDB42AN15A0-F085

              MOSFET NMOS D2PAK 150V 42 MOHM
              FDB120N10TM

              Mfr.#: FDB120N10TM

              OMO.#: OMO-FDB120N10TM-1190

              Nuovo e originale
              FDB12N50UTM_12

              Mfr.#: FDB12N50UTM_12

              OMO.#: OMO-FDB12N50UTM-12-1190

              Nuovo e originale
              FDB2670-NL

              Mfr.#: FDB2670-NL

              OMO.#: OMO-FDB2670-NL-1190

              Nuovo e originale
              FDB7030

              Mfr.#: FDB7030

              OMO.#: OMO-FDB7030-1190

              Nuovo e originale
              FDB-1012

              Mfr.#: FDB-1012

              OMO.#: OMO-FDB-1012-FINISAR

              Evaluation Board for 2.5 Gb/s GBIC Transceiver Modules (Alt: FDB-1012)
              FDBA 56-10-6 PN-K A5610

              Mfr.#: FDBA 56-10-6 PN-K A5610

              OMO.#: OMO-FDBA-56-10-6-PN-K-A5610-1190

              FDBA 6C 6#20 PIN PLUG
              Disponibilità
              Azione:
              Available
              Su ordine:
              4500
              Inserisci la quantità:
              Il prezzo attuale di FDB8441 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
              Prezzo di riferimento (USD)
              Quantità
              Prezzo unitario
              est. Prezzo
              1
              1,78 USD
              1,78 USD
              10
              1,70 USD
              16,96 USD
              100
              1,61 USD
              160,65 USD
              500
              1,52 USD
              758,65 USD
              1000
              1,43 USD
              1 428,00 USD
              A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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