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BSZ22DN20NS3 G

BSZ22DN20NS3 G
Mfr. #:
BSZ22DN20NS3 G
Produttore:
Infineon Technologies
Descrizione:
Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSZ22DN20NS3 G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
BSZ22DN20NS3 G maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
FET - Single
Serie
OptiMOS
Confezione
Imballaggio alternativo Digi-ReelR
Alias ​​parziali
BSZ22DN20NS3GATMA1 BSZ22DN20NS3GXT SP000781794
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
8-PowerTDFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
PG-TSDSON-8 (3.3x3.3)
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
34W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
200V
Ingresso-Capacità-Ciss-Vds
430pF @ 100V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
7A (Tc)
Rds-On-Max-Id-Vgs
225 mOhm @ 3.5A, 10V
Vgs-th-Max-Id
4V @ 13μA
Gate-Carica-Qg-Vgs
5.6nC @ 10V
Pd-Power-Dissipazione
34 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
7 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Rds-On-Drain-Source-Resistenza
194 mOhms
Polarità del transistor
Canale N
Transconduttanza diretta-Min
7 S 3.5 S
Tags
BSZ22, BSZ2, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Parte # Mfg. Descrizione Azione Prezzo
BSZ22DN20NS3GATMA1
DISTI # V36:1790_06384496		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant		20000
  • 5000:$0.3973
BSZ22DN20NS3GATMA1
DISTI # V72:2272_06384496		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant		664
  • 500:$0.5384
  • 250:$0.5510
  • 100:$0.6122
  • 25:$0.7147
  • 10:$0.8735
  • 1:$1.0134
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9613In Stock
  • 1000:$0.4633
  • 500:$0.5869
  • 100:$0.7104
  • 10:$0.9110
  • 1:$1.0200
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9613In Stock
  • 1000:$0.4633
  • 500:$0.5869
  • 100:$0.7104
  • 10:$0.9110
  • 1:$1.0200
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 7A 8TSDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 25000:$0.3799
  • 10000:$0.3839
  • 5000:$0.3988
BSZ22DN20NS3GATMA1
DISTI # 33128679		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant		20000
  • 5000:$0.3973
BSZ22DN20NS3GATMA1
DISTI # 32736050		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.3501
BSZ22DN20NS3 G
DISTI # 32725881		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP
RoHS: Compliant		3720
  • 56:$0.4525
BSZ22DN20NS3GATMA1
DISTI # 31984785		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R
RoHS: Compliant		664
  • 16:$1.0134
BSZ22DN20NS3G
DISTI # BSZ22DN20NS3G		Infineon Technologies AG- Bulk (Alt: BSZ22DN20NS3G)
Min Qty: 962
Container: Bulk		Americas - 0
  • 9620:$0.3679
  • 4810:$0.3749
  • 2886:$0.3879
  • 1924:$0.4019
  • 962:$0.4169
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Bulk (Alt: BSZ22DN20NS3GATMA1)
Min Qty: 962
Container: Bulk		Americas - 0
  • 9620:$0.3299
  • 4810:$0.3359
  • 2886:$0.3479
  • 1924:$0.3609
  • 962:$0.3739
BSZ22DN20NS3GATMA1
DISTI # BSZ22DN20NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ22DN20NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.3619
  • 30000:$0.3689
  • 20000:$0.3819
  • 10000:$0.3959
  • 5000:$0.4109
BSZ22DN20NS3GATMA1
DISTI # SP000781794		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP (Alt: SP000781794)
RoHS: Compliant
Min Qty: 5000		Europe - 0
  • 50000:€0.3329
  • 30000:€0.3579
  • 20000:€0.3879
  • 10000:€0.4229
  • 5000:€0.5179
BSZ22DN20NS3GATMA1
DISTI # 85X4160		Infineon Technologies AGMOSFET Transistor, N Channel, 7 A, 200 V, 0.194 ohm, 10 V, 3 V RoHS Compliant: Yes0
    BSZ22DN20NS3 G
    DISTI # 726-BSZ22DN20NS3G    		Infineon Technologies AGMOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    RoHS: Compliant    		12720
    • 1:$0.9300
    • 10:$0.8000
    • 100:$0.6150
    • 500:$0.5430
    • 1000:$0.4290
    • 5000:$0.3800
    • 10000:$0.3660
    BSZ22DN20NS3GATMA1
    DISTI # 726-BSZ22DN20NS3GATM    		Infineon Technologies AGMOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    RoHS: Compliant    		218
    • 1:$0.9300
    • 10:$0.8000
    • 100:$0.6150
    • 500:$0.5430
    • 1000:$0.4290
    • 5000:$0.3800
    • 10000:$0.3660
    BSZ22DN20NS3GInfineon Technologies AGPower Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		1700
    • 1000:$0.3800
    • 500:$0.4000
    • 100:$0.4200
    • 25:$0.4400
    • 1:$0.4700
    BSZ22DN20NS3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		122641
    • 1000:$0.3400
    • 500:$0.3600
    • 100:$0.3800
    • 25:$0.3900
    • 1:$0.4200
    BSZ22DN20NS3 G
    DISTI # C1S322000411092    		Infineon Technologies AGTrans MOSFET N-CH 200V 7A 8-Pin TSDSON EP
    RoHS: Compliant    		30
    • 5:$0.3620
    BSZ22DN20NS3GATMA1
    DISTI # 2443374    		Infineon Technologies AGMOSFET, N CH, 200V, 7A, TSDSON-8
    RoHS: Compliant    		0
    • 5000:$0.5850
    • 1000:$0.6600
    • 500:$0.8350
    • 100:$0.9460
    • 10:$1.2400
    • 1:$1.4300
    BSZ22DN20NS3GATMA1
    DISTI # 2443374RL    		Infineon Technologies AGMOSFET, N CH, 200V, 7A, TSDSON-8
    RoHS: Compliant    		0
    • 5000:$0.5850
    • 1000:$0.6600
    • 500:$0.8350
    • 100:$0.9460
    • 10:$1.2400
    • 1:$1.4300
    Immagine Parte # Descrizione
    BSZ22DN20NS3 G

    Mfr.#: BSZ22DN20NS3 G

    OMO.#: OMO-BSZ22DN20NS3-G

    		 MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    BSZ22DN20NS3GATMA1

    Mfr.#: BSZ22DN20NS3GATMA1

    OMO.#: OMO-BSZ22DN20NS3GATMA1

    		 MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
    BSZ22DN20NS3 G

    Mfr.#: BSZ22DN20NS3 G

    OMO.#: OMO-BSZ22DN20NS3-G-1190

    		 Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP
    BSZ22DN20NS3G

    Mfr.#: BSZ22DN20NS3G

    OMO.#: OMO-BSZ22DN20NS3G-1190

    		 Power Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSZ22DN20NS3GATMA1

    Mfr.#: BSZ22DN20NS3GATMA1

    OMO.#: OMO-BSZ22DN20NS3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 200V 7A 8TSDSON
    Disponibilità
    Azione:
    Available
    Su ordine:
    3000
    Inserisci la quantità:
    Il prezzo attuale di BSZ22DN20NS3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,43 USD
    0,43 USD
    10
    0,41 USD
    4,12 USD
    100
    0,39 USD
    39,02 USD
    500
    0,37 USD
    184,25 USD
    1000
    0,35 USD
    346,80 USD
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