MR0A16AMA35R

Mfr. #:: MR0A16AMA35R
Produttore:: Everspin Technologies
Descrizione:: IC RAM 1M PARALLEL 48FBGA
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: MR0A16AMA35R Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
Pagamento:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:: MR0A16AMA35R maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Everspin Technologies Inc.

categoria di prodotto: Memoria

Serie: -

Confezione: Tape & Reel (TR) Imballaggio alternativo

Pacchetto-Custodia: 48-LFBGA

Temperatura di esercizio: 0°C ~ 70°C (TA)

Interfaccia: Parallelo

Tensione di alimentazione: 3 V ~ 3.6 V

Pacchetto-dispositivo-fornitore: 48-FBGA (8x8)

Dimensione della memoria: 1M (64K x 16)

Tipo di memoria: MRAM (RAM magnetoresistiva)

Velocità: 35ns

Formato-Memoria: RAM

Tags: MR0A16AM, MR0A1, MR0A, MR0

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR0A16AMA35R Valutazioni e recensioni

F***e

I'm fast.. All perfect!

2019-07-30

W***t

Good service.

2019-08-08

A***n

All ok

2019-09-17

M***v

Everything is fine. Thanks!

2019-04-06

MR0A16AMA35R Descrizione

***i-Key: IC RAM 1M PARALLEL 48FBGA

MR0A16AMA35R Maggiori informazioni

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM: Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
MR0A16AMA35R DISTI # MR0A16AMA35R-ND	Everspin Technologies	IC RAM 1M PARALLEL 48FBGA RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$10.4280
MR0A16AMA35 DISTI # 936-MR0A16AMA35	Everspin Technologies	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS: Compliant	0	696:$8.6800
MR0A16AMA35R DISTI # 936-MR0A16AMA35R	Everspin Technologies	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS: Compliant	0	2000:$8.3700

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: MR0A16ACMA35R OMO.#: OMO-MR0A16ACMA35R	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16AMYS35 OMO.#: OMO-MR0A16AMYS35	NVRAM 1Mb 3.3V 64K x 16 35ns Parallel MRAM
	Mfr.#: MR0A16AMA35R OMO.#: OMO-MR0A16AMA35R	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16AVMA35R OMO.#: OMO-MR0A16AVMA35R	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16AYS35 OMO.#: OMO-MR0A16AYS35	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16AVYS35 OMO.#: OMO-MR0A16AVYS35-EVERSPIN-TECHNOLOGIES	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16ACYS35 OMO.#: OMO-MR0A16ACYS35-EVERSPIN-TECHNOLOGIES	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16AMYS35R OMO.#: OMO-MR0A16AMYS35R-EVERSPIN-TECHNOLOGIES	NVRAM 1Mb 3.3V 64K x 16 35ns Parallel MRAM
	Mfr.#: MR0A16AMA35R OMO.#: OMO-MR0A16AMA35R-EVERSPIN-TECHNOLOGIES	IC RAM 1M PARALLEL 48FBGA
	Mfr.#: MR0A16AVYS35R OMO.#: OMO-MR0A16AVYS35R-EVERSPIN-TECHNOLOGIES	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM

Disponibilità

Azione:: Available
Su ordine:: 5000
Inserisci la quantità:

Il prezzo attuale di MR0A16AMA35R è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~11,90 USD~~; ~~11,90 USD~~

10: ~~11,30 USD~~; ~~113,00 USD~~

100: ~~10,71 USD~~; ~~1 070,55 USD~~

500: ~~10,11 USD~~; ~~5 055,40 USD~~

1000: ~~9,52 USD~~; ~~9 516,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

MR0A16AM 4
MR0A1 15
MR0A 28
MR0 1238

Prodotti più recenti

Nanonics Per MIL-DTL-32139 Dualobe

TE Connectivity Aerospace, Defense, and Marine's Nanonics products are designed and qualified to MIL-DTL-32139 specifications.
THERMOFIT® DR-25 Tubing

TE Connectivity's THERMOFIT DR-25 tubing offers a flexible, flame retardant, fluid- and abrasion-resistant solution.
INSTALITE ZH-150 Tubing

TE Connectivity's INSTALITE ZH-150 heat-shrinkable tubing combines high-temperature and zero halogen properties in a lightweight material.
Raychem S200 Shield Terminators

TE Connectivity Aerospace, Defense and Marine's S200 shield terminators provide an environmentally protected shield for high temperature cable applications.
Compare MR0A16AMA35R

MR0A16AMA35 vs MR0A16AMA35R vs MR0A16AMYS35
Multi-Position Backplane RF Modules

The multi-position backplane RF module from TE has high level of performance to meet the demands of many different applications.

More Newest Products