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SIDR680DP-T1-GE3

SIDR680DP-T1-GE3
Mfr. #:
SIDR680DP-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 80V Vds 20V Vgs PowerPAK SO-8DC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIDR680DP-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR680DP-T1-GE3 DatasheetSIDR680DP-T1-GE3 Datasheet (P4-P6)SIDR680DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Maggiori informazioni:
SIDR680DP-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-SO-8DC-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
80 V
Id - Corrente di scarico continua:
100 A
Rds On - Resistenza Drain-Source:
3.4 mOhms
Vgs th - Tensione di soglia gate-source:
2 V
Vgs - Tensione Gate-Source:
7.5 V
Qg - Carica cancello:
69.5 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
125 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
TrenchFET
Confezione:
Bobina
Serie:
SID
Tipo di transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Tempo di caduta:
12 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
25 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
28 ns
Tempo di ritardo di accensione tipico:
19 ns
Tags
SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descrizione Azione Prezzo
SIDR680DP-T1-GE3
DISTI # V72:2272_21764827		Vishay IntertechnologiesSIDR680DP-T1-GE30
    SIDR680DP-T1-GE3
    DISTI # SIDR680DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 80V
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		3000In Stock
    • 6000:$1.3041
    • 3000:$1.3204
    SIDR680DP-T1-GE3
    DISTI # SIDR680DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 80V
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		3000In Stock
    • 1000:$1.4608
    • 500:$1.7630
    • 100:$2.1458
    • 10:$2.6700
    • 1:$2.9700
    SIDR680DP-T1-GE3
    DISTI # SIDR680DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 80V
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		3000In Stock
    • 1000:$1.4608
    • 500:$1.7630
    • 100:$2.1458
    • 10:$2.6700
    • 1:$2.9700
    SIDR680DP-T1-GE3
    DISTI # 59AC7341    		Vishay IntertechnologiesN-CHANNEL 80-V (D-S) MOSFET0
    • 10000:$1.1700
    • 6000:$1.2100
    • 4000:$1.2600
    • 2000:$1.4000
    • 1000:$1.4800
    • 1:$1.5700
    SIDR680DP-T1-GE3
    DISTI # 78AC6506    		Vishay IntertechnologiesMOSFET, N-CH, 80V, 100A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.4V,Power RoHS Compliant: Yes0
    • 500:$1.6500
    • 250:$1.7600
    • 100:$1.8800
    • 50:$2.0600
    • 25:$2.2400
    • 10:$2.4200
    • 1:$2.9200
    SIDR680DP-T1-GE3
    DISTI # 78-SIDR680DP-T1-GE3    		Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		7112
    • 1:$2.8900
    • 10:$2.4000
    • 100:$1.8600
    • 500:$1.6300
    • 1000:$1.3500
    • 3000:$1.2500
    • 6000:$1.2100
    SIDR680DP-T1-GE3
    DISTI # 2932901    		Vishay IntertechnologiesMOSFET, N-CH, 80V, 100A, 150DEG C, 125W0
    • 500:£1.2000
    • 250:£1.2900
    • 100:£1.3700
    • 10:£1.7700
    • 1:£2.3900
    SIDR680DP-T1-GE3
    DISTI # 2932901    		Vishay IntertechnologiesMOSFET, N-CH, 80V, 100A, 150DEG C, 125W
    RoHS: Compliant    		0
    • 1000:$2.3800
    • 500:$2.5200
    • 250:$2.6700
    • 100:$2.9100
    • 10:$3.3500
    • 1:$3.8500
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    Mfr.#: 53398-0471

    OMO.#: OMO-53398-0471-410

    		 Headers & Wire Housings VERTICAL HDR SMT 4P
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    OMO.#: OMO-MMU01020C3309FB300-VISHAY

    		 MELF Resistors 0.2W 33ohms 1% 0102 MELF 150V 50ppm
    AF0603FR-0722KL

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    OMO.#: OMO-AF0603FR-0722KL-YAGEO

    		 Thick Film Resistors - SMD 22K ohm 1% 1/10W
    Disponibilità
    Azione:
    Available
    Su ordine:
    1990
    Inserisci la quantità:
    Il prezzo attuale di SIDR680DP-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    2,89 USD
    2,89 USD
    10
    2,40 USD
    24,00 USD
    100
    1,86 USD
    186,00 USD
    500
    1,63 USD
    815,00 USD
    1000
    1,35 USD
    1 350,00 USD
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