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IRGP4069PBF

IRGP4069PBF
Mfr. #:
IRGP4069PBF
Produttore:
Infineon / IR
Descrizione:
IGBT Transistors 600V 76A
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRGP4069PBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGP4069PBF DatasheetIRGP4069PBF Datasheet (P4-P6)IRGP4069PBF Datasheet (P7-P9)IRGP4069PBF Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione di saturazione collettore-emettitore:
1.6 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
76 A
Pd - Dissipazione di potenza:
268 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Corrente continua del collettore Ic Max:
76 A
Altezza:
20.7 mm
Lunghezza:
15.87 mm
Larghezza:
5.31 mm
Marca:
Infineon / IR
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
25
sottocategoria:
IGBT
Parte # Alias:
SP001542388
Unità di peso:
1.340411 oz
Tags
IRGP4069, IRGP406, IRGP40, IRGP4, IRGP, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
600V Low VCEon Trench IGBT in a TO-247 package
***ical
Trans IGBT Chip N-CH 600V 76A 3-Pin(3+Tab) TO-247AC
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AC
***ment14 APAC
IGBT,N CH,600V,76A,TO-247AC; Transistor Type:IGBT; DC Collector Current:76A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:368W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:268W
Parte # Mfg. Descrizione Azione Prezzo
IRGP4069PBF
DISTI # IRGP4069PBF-ND		Infineon Technologies AGIGBT 600V 76A 268W TO247AC
RoHS: Compliant
Min Qty: 125
Container: Tube		Limited Supply - Call
    IRGP4069PBF
    DISTI # IRGP4069PBF    		Infineon Technologies AGTrans IGBT Chip N-CH 600V 76A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRGP4069PBF)
    Min Qty: 143
    Container: Bulk    		Americas - 0
    • 715:$2.1900
    • 1430:$2.1900
    • 429:$2.2900
    • 286:$2.3900
    • 143:$2.4900
    IRGP4069PBF
    DISTI # 70019810    		Infineon Technologies AGMOSFET,600V,76.000A,TO-247
    RoHS: Compliant    		0
    • 125:$3.7500
    IRGP4069PBF
    DISTI # 942-IRGP4069PBF    		Infineon Technologies AGIGBT Transistors 600V 76A
    RoHS: Compliant    		41
    • 1:$4.6400
    • 10:$3.9400
    • 25:$3.8700
    • 100:$3.4200
    • 250:$3.2400
    • 500:$2.8900
    • 1000:$2.4400
    • 2500:$2.2500
    IRGP4069PBFInternational RectifierInsulated Gate Bipolar Transistor, 76A I(C), 600V V(BR)CES, N-Channel, TO-247AC
    RoHS: Compliant    		692
    • 1000:$2.3200
    • 500:$2.4400
    • 100:$2.5400
    • 25:$2.6500
    • 1:$2.8500
    IRGP4069PBF
    DISTI # IRGP4069PBF    		Infineon Technologies AGTransistor: IGBT,600V,76A,268W,TO247-32
    • 1:$5.9800
    • 5:$5.4100
    • 25:$4.4200
    • 100:$4.0000
    IRGP4069PBFInternational Rectifier 
    RoHS: Compliant    		Europe - 250
      Immagine Parte # Descrizione
      IGW30N60TPXKSA1

      Mfr.#: IGW30N60TPXKSA1

      OMO.#: OMO-IGW30N60TPXKSA1

      		 IGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off ener
      IKW30N65H5XKSA1

      Mfr.#: IKW30N65H5XKSA1

      OMO.#: OMO-IKW30N65H5XKSA1

      		 IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a
      FGH40N60SFTU

      Mfr.#: FGH40N60SFTU

      OMO.#: OMO-FGH40N60SFTU

      		 IGBT Transistors N-CH / 40A 600V FS Planar
      STGW30NC60WD

      Mfr.#: STGW30NC60WD

      OMO.#: OMO-STGW30NC60WD

      		 IGBT Transistors PowerMESH&#34 IGBT
      STGW30NC60WD

      Mfr.#: STGW30NC60WD

      OMO.#: OMO-STGW30NC60WD-STMICROELECTRONICS

      		 IGBT 600V 60A 200W TO247
      IGW30N60TPXKSA1

      Mfr.#: IGW30N60TPXKSA1

      OMO.#: OMO-IGW30N60TPXKSA1-INFINEON-TECHNOLOGIES

      		 IGBT 600V 53A TO247-3
      IKW30N65H5XKSA1

      Mfr.#: IKW30N65H5XKSA1

      OMO.#: OMO-IKW30N65H5XKSA1-INFINEON-TECHNOLOGIES

      		 IGBT TRENCH 650V 55A TO247-3
      FGH40N60SFTU

      Mfr.#: FGH40N60SFTU

      OMO.#: OMO-FGH40N60SFTU-ON-SEMICONDUCTOR

      		 IGBT 600V 80A 290W TO247
      Disponibilità
      Azione:
      41
      Su ordine:
      2024
      Inserisci la quantità:
      Il prezzo attuale di IRGP4069PBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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