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SIZ998DT-T1-GE3

SIZ998DT-T1-GE3
Mfr. #:
SIZ998DT-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIZ998DT-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ998DT-T1-GE3 DatasheetSIZ998DT-T1-GE3 Datasheet (P4-P6)SIZ998DT-T1-GE3 Datasheet (P7-P9)SIZ998DT-T1-GE3 Datasheet (P10-P12)SIZ998DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Maggiori informazioni:
SIZ998DT-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAIR-6x5-8
Numero di canali:
2 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
20 A, 60 A
Rds On - Resistenza Drain-Source:
4.7 mOhms, 2.2 mOhms
Vgs th - Tensione di soglia gate-source:
1.1 V
Vgs - Tensione Gate-Source:
- 16 V, 20 V
Qg - Carica cancello:
18 nC, 44.3 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
20.2 W, 32.9 W
Configurazione:
Dual
Modalità canale:
Aumento
Nome depositato:
TrenchFET
Confezione:
Bobina
Altezza:
0.8 mm
Lunghezza:
6 mm
Serie:
TAGLIA
Tipo di transistor:
2 N-Channel
Larghezza:
5 mm
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
80 S, 165 S
Tempo di caduta:
10 ns, 10 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
65 ns, 65 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
10 ns, 17 ns
Tempo di ritardo di accensione tipico:
15 ns, 25 ns
Tags
SIZ9, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 18.8A/32.8A 8-Pin PowerPAIR T/R
***ark
Dual N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes
***ment14 APAC
MOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descrizione Azione Prezzo
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.6853
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.7563
  • 500:$0.9580
  • 100:$1.2353
  • 10:$1.5630
  • 1:$1.7600
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2 N-CH 30V 8-POWERPAIR
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.7563
  • 500:$0.9580
  • 100:$1.2353
  • 10:$1.5630
  • 1:$1.7600
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 18.8A/32.8A 8-Pin PowerPAIR T/R (Alt: SIZ998DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 50
  • 3000:€1.2409
  • 6000:€0.8899
  • 12000:€0.7219
  • 18000:€0.6379
  • 30000:€0.6109
SIZ998DT-T1-GE3
DISTI # SIZ998DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 18.8A/32.8A 8-Pin PowerPAIR T/R (Alt: SIZ998DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel		Asia - 0
    SIZ998DT-T1-GE3
    DISTI # SIZ998DT-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 18.8A/32.8A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ998DT-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.6469
    • 6000:$0.6279
    • 12000:$0.6019
    • 18000:$0.5859
    • 30000:$0.5699
    SIZ998DT-T1-GE3
    DISTI # 43AC4021    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,, RoHS Compliant: Yes0
    • 1:$1.5900
    • 10:$1.3100
    • 25:$1.2100
    • 50:$1.1100
    • 100:$1.0100
    • 250:$0.9400
    • 500:$0.8700
    SIZ998DT-T1-GE3
    DISTI # 78-SIZ998DT-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
    RoHS: Compliant    		0
    • 1:$1.5600
    • 10:$1.2900
    • 100:$0.9840
    • 500:$0.8460
    • 1000:$0.6680
    • 3000:$0.6230
    SIZ998DT-T1-GE3
    DISTI # 2802799    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
    RoHS: Compliant    		0
    • 5:£1.3900
    • 25:£1.2600
    • 100:£0.9750
    SIZ998DT-T1-GE3
    DISTI # 2802799    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 60A, POWERPAIR
    RoHS: Compliant    		0
    • 5:$2.6400
    • 25:$2.1800
    • 100:$1.7100
    • 250:$1.4100
    • 500:$1.1900
    • 1000:$1.1300
    • 5000:$1.0900
    SIZ998DT-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
    RoHS: Compliant    		Americas -
      Immagine Parte # Descrizione
      TPS259271DRCT

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      OMO.#: OMO-TXB0104RGYR

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      		 Thin Film Resistors - SMD .200W 20Kohms .5% 0402 25ppm Hi Power
      46992-0210

      Mfr.#: 46992-0210

      OMO.#: OMO-46992-0210-410

      		 Headers & Wire Housings MiniFitJr Rcpt DR V2 GW 2Ckt
      TXB0104RGYR

      Mfr.#: TXB0104RGYR

      OMO.#: OMO-TXB0104RGYR-TEXAS-INSTRUMENTS

      		 Translation - Voltage Levels 4-Bit Bi-directional V-Level Translato
      Disponibilità
      Azione:
      Available
      Su ordine:
      1986
      Inserisci la quantità:
      Il prezzo attuale di SIZ998DT-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,55 USD
      1,55 USD
      10
      1,28 USD
      12,80 USD
      100
      0,98 USD
      98,40 USD
      500
      0,85 USD
      423,00 USD
      1000
      0,67 USD
      668,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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