AUIRFS4010TRL

AUIRFS4010TRL
Mfr. #:
AUIRFS4010TRL
Produttore:
Infineon / IR
Descrizione:
MOSFET 100V 170A 4.7 mOhm Automotive MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AUIRFS4010TRL Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
TO-252-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
180 A
Rds On - Resistenza Drain-Source:
4.7 mOhms
Vgs th - Tensione di soglia gate-source:
4 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
143 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
375 W
Configurazione:
Separare
Qualificazione:
AEC-Q101
Confezione:
Bobina
Altezza:
2.3 mm
Lunghezza:
6.5 mm
Tipo di transistor:
1 N-Channel
Larghezza:
6.22 mm
Marca:
Infineon / IR
Transconduttanza diretta - Min:
189 S
Tempo di caduta:
77 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
86 ns
Quantità confezione di fabbrica:
800
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
100 ns
Tempo di ritardo di accensione tipico:
21 ns
Parte # Alias:
SP001520712
Unità di peso:
0.139332 oz
Tags
AUIRFS4010TRL, AUIRFS4010T, AUIRFS40, AUIRFS4, AUIRFS, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
AUIRFS4010 N-channel MOSFET Transistor; 180 A; 100 V; 3-Pin D2PAK
***ical
Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(2+Tab) D2PAK Tube
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package
***ment14 APAC
MOSFET, N-CH, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***-Tronics LLC (USA)
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 180A D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK
***ment14 APAC
MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:100V; On Resistance
***roFlash
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***et
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
***ark
N CH POWER MOSFET, HEXFET, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***et
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK Tube
***C
MOSFET N-CH 100V 180A D2PAK MOSFET N-CH 100V 180A D2PAK
***(Formerly Allied Electronics)
MOSFET, 100V, 180A, 4.7MOHM, 143NC QG, D2PAK
***ark
HEXFET Power MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:180A; On Resistance, Rds(on):3.9mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:3-D2PAK ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 100V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9575pF; Current Id Max:180A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:720A; Reverse Recovery Time trr Typ:72ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ure Electronics
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
***Yang
Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
***ment14 APAC
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
***et
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R
***ponent Stockers USA
180 A 100 V 0.004 ohm N-CHANNEL Si POWER MOSFET
***ark
MOSFET, N CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 180A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ow.cn
STH180N10F3-2 STMicroelectronics Transistors MOSFETs N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R - Arrow.com
***icroelectronics SCT
Power MOSFETs, 100V, 180A, H2PAK-2, Tape and Reel
***ineon SCT
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:370W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Exhaust
***(Formerly Allied Electronics)
IRFS7734PBF N-channel MOSFET Transistor; 183 A; 75 V; 3-Pin D2PAK
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***roFlash
Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET® Power Mosfet - D2PAK
***ark
TUBE / MOSFET, 75V, 183A, 3.5 Ohm, 180 nC, D2PAK
***nell
MOSFET, N-CH, 75V, 183A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 183A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 290 W
*** Stop Electro
Power Field-Effect Transistor, 183A I(D), 75V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
***ical
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
***emi
Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel
***r Electronics
Power Field-Effect Transistor, 100A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***icroelectronics
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
***ure Electronics
N-Channel 100 V 2.3 mOhm STripFET™ VII DeepGATE Power Mosfet-H2PAK-2
***ark
MOSFET, N-CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
AUIRFS4010TRL
DISTI # AUIRFS4010TRL
Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRFS4010TRL)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$2.4900
  • 1600:$2.3900
  • 3200:$2.2900
  • 4800:$2.1900
  • 8000:$2.1900
AUIRFS4010TRL
DISTI # 942-AUIRFS4010TRL
Infineon Technologies AGMOSFET 100V 170A 4.7 mOhm Automotive MOSFET
RoHS: Compliant
469
  • 1:$4.6800
  • 10:$3.9800
  • 100:$3.4500
  • 250:$3.2700
  • 500:$2.9400
  • 800:$2.4800
  • 2400:$2.3500
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Surface Mount Fuses 125V.08A
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Surface Mount Fuses 125V 10A
Disponibilità
Azione:
700
Su ordine:
2683
Inserisci la quantità:
Il prezzo attuale di AUIRFS4010TRL è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,68 USD
4,68 USD
10
3,98 USD
39,80 USD
100
3,45 USD
345,00 USD
250
3,27 USD
817,50 USD
500
2,94 USD
1 470,00 USD
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