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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BLS6G3135S-20112 DISTI # V36:1790_16142337 | Ampleon | BLS6G3135S-20/SOT608/TRAY | 0 |
|
| BLS6G3135S-20,112 DISTI # 1603-1078-ND | Ampleon | RF FET LDMOS 60V 15.5DB SOT608B RoHS: Compliant Min Qty: 1 Container: Tray | 20In Stock |
|
| BLS6G3135S-20,112 DISTI # BLS6G3135S-20112 | Ampleon | Trans MOSFET N-CH 60V 2.1A 3-Pin CDFM Bulk - Bulk (Alt: BLS6G3135S-20112) Min Qty: 2 Container: Bulk | Americas - 0 |
|
| BLS6G3135S-20,112 DISTI # BLS6G3135S-20,112 | Ampleon | Trans MOSFET N-CH 60V 2.1A 3-Pin CDFM Bulk - Rail/Tube (Alt: BLS6G3135S-20,112) RoHS: Compliant Min Qty: 60 Container: Tube | Americas - 0 |
|
| BLS6G3135S-20112 | NXP Semiconductors | Now Ampleon, BLS6G3135S-20, LDMOS S-band radar power transistor, SOT608 (CDFM2) RoHS: Not Compliant | 47 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BLS6G3135-120 OMO.#: OMO-BLS6G3135-120-1152 |
RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, S BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET |
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Mfr.#: BLS6G3135-120112 OMO.#: OMO-BLS6G3135-120112-1190 |
Nuovo e originale |
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Mfr.#: BLS6G3135-20 OMO.#: OMO-BLS6G3135-20-1190 |
Nuovo e originale |
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Mfr.#: BLS6G3135S-120 OMO.#: OMO-BLS6G3135S-120-1190 |
Nuovo e originale |
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Mfr.#: BLS6G3135S-120112 OMO.#: OMO-BLS6G3135S-120112-1190 |
BLS6G3135S-120/SOT502/TRAY |
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|
Mfr.#: BLS6G3135S-20 OMO.#: OMO-BLS6G3135S-20-1190 |
Nuovo e originale |
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Mfr.#: BLS6G3135S-20112 OMO.#: OMO-BLS6G3135S-20112-1190 |
Now Ampleon, BLS6G3135S-20, LDMOS S-band radar power transistor, SOT608 (CDFM2) |
|
Mfr.#: BLS6G3135-120,112 |
RF MOSFET Transistors LDMOS TNS |
|
Mfr.#: BLS6G3135S-120,112 |
RF MOSFET Transistors TRANS S-BAND RADAR LDMSO |
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Mfr.#: BLS6G3135S-20,112 |
RF MOSFET Transistors TRANS S-BAND RADAR LDMOS |