BLS6G3135-120,112

BLS6G3135-120,112
Mfr. #:
BLS6G3135-120,112
Produttore:
Ampleon USA Inc
Descrizione:
RF MOSFET Transistors LDMOS TNS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BLS6G3135-120,112 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Tags
BLS6G3135-1, BLS6G3, BLS6, BLS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 3.1 to 3.5 GHz, 120 W, 11 dB, 32 V, LDMOS, SOT-502A
***et
Trans MOSFET N-CH 60V 7.2A 3-Pin LDMOST Blister
*** Americas
LDMOS S-Band radar power transistor
***ark
N Channel S-Band Ldmos Transistor, 32V, 3100Mhz - 3500Mhz, 2-Sot-502B; Drain Source Voltage Vds:32V; Continuous Drain Current Id:7.2A; Power Dissipation Pd:120W; Operating Frequency Min:3.1Ghz; Operating Frequency Max:3.5Ghz; Msl:- Rohs Compliant: Yes
Parte # Mfg. Descrizione Azione Prezzo
BLS6G3135-120,112
DISTI # BLS6G3135-120,112-ND
AmpleonRF FET LDMOS 60V 11DB SOT502A
RoHS: Compliant
Min Qty: 20
Container: Tray
Temporarily Out of Stock
  • 20:$328.9970
BLS6G3135-120,112
DISTI # 70R2902
AmpleonN CHANNEL S-BAND LDMOS TRANSISTOR, 32V, 3100MHZ - 3500MHZ, 2-SOT-502B,Drain Source Voltage Vds:32V,Continuous Drain Current Id:7.2A,Power Dissipation Pd:120W,Operating Frequency Min:3.1GHz,Operating Frequency Max:3.5GHz,MSL:- RoHS Compliant: Yes0
    Immagine Parte # Descrizione
    BLS6G3135-120

    Mfr.#: BLS6G3135-120

    OMO.#: OMO-BLS6G3135-120-1152

    RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, S BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    BLS6G3135-120112

    Mfr.#: BLS6G3135-120112

    OMO.#: OMO-BLS6G3135-120112-1190

    Nuovo e originale
    BLS6G3135-20

    Mfr.#: BLS6G3135-20

    OMO.#: OMO-BLS6G3135-20-1190

    Nuovo e originale
    BLS6G3135-20112

    Mfr.#: BLS6G3135-20112

    OMO.#: OMO-BLS6G3135-20112-1190

    Now Ampleon, BLS6G3135-20, LDMOS S-band radar power transistor, SOT608 (CDFM2)
    BLS6G3135S-120112

    Mfr.#: BLS6G3135S-120112

    OMO.#: OMO-BLS6G3135S-120112-1190

    BLS6G3135S-120/SOT502/TRAY
    BLS6G3135S-20

    Mfr.#: BLS6G3135S-20

    OMO.#: OMO-BLS6G3135S-20-1190

    Nuovo e originale
    BLS6G3135-120,112

    Mfr.#: BLS6G3135-120,112

    OMO.#: OMO-BLS6G3135-120-112-AMPLEON

    RF MOSFET Transistors LDMOS TNS
    BLS6G3135S-120,112

    Mfr.#: BLS6G3135S-120,112

    OMO.#: OMO-BLS6G3135S-120-112-AMPLEON

    RF MOSFET Transistors TRANS S-BAND RADAR LDMSO
    BLS6G3135S-20,112

    Mfr.#: BLS6G3135S-20,112

    OMO.#: OMO-BLS6G3135S-20-112-AMPLEON

    RF MOSFET Transistors TRANS S-BAND RADAR LDMOS
    BLS6G3135-20,112

    Mfr.#: BLS6G3135-20,112

    OMO.#: OMO-BLS6G3135-20-112-AMPLEON

    RF MOSFET Transistors LDMOS TNS
    Disponibilità
    Azione:
    Available
    Su ordine:
    5000
    Inserisci la quantità:
    Il prezzo attuale di BLS6G3135-120,112 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    493,50 USD
    493,50 USD
    10
    468,82 USD
    4 688,21 USD
    100
    444,15 USD
    44 414,60 USD
    500
    419,47 USD
    209 735,60 USD
    1000
    394,80 USD
    394 796,40 USD
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