OMO ElectronicOMO Electronic
Expand menu
Ciao, accediIl mio account
0 Carrello

SIS892DN-T1-GE3

SIS892DN-T1-GE3
Mfr. #:
SIS892DN-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 100V 30A 1212-8 PPAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIS892DN-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIS892DN-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SIS892, SIS89, SIS8, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212-8 T/R
***et Europe
Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 100V 30A 1212-8 PPAK
***ied Electronics & Automation
100V 30A 43W 29 mohms @ 10V
***
N-CHANNEL 100-V (D-S)
***ark
MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.7W; Operating Temperature Range:-55°C to +150°C;;RoHS Compliant: Yes
***nell
MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:0.024ohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; Current Id Max:8A; Power Dissipation:3.7W
***ment14 APAC
MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Power Dissipation Pd:3.7W; Voltage Vgs Max:20V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Parte # Mfg. Descrizione Azione Prezzo
SIS892DN-T1-GE3
DISTI # V36:1790_09216113		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
  • 3000000:$0.6272
  • 1500000:$0.6274
  • 300000:$0.6440
  • 30000:$0.6717
  • 3000:$0.6762
SIS892DN-T1-GE3
DISTI # V72:2272_09216113		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		0
    SIS892DN-T1-GE3
    DISTI # SIS892DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 100V 30A 1212-8 PPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2531In Stock
    • 1000:$0.7462
    • 500:$0.9452
    • 100:$1.1442
    • 10:$1.4680
    • 1:$1.6400
    SIS892DN-T1-GE3
    DISTI # SIS892DN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 100V 30A 1212-8 PPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2531In Stock
    • 1000:$0.7462
    • 500:$0.9452
    • 100:$1.1442
    • 10:$1.4680
    • 1:$1.6400
    SIS892DN-T1-GE3
    DISTI # SIS892DN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 100V 30A 1212-8 PPAK
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 15000:$0.6182
    • 6000:$0.6424
    • 3000:$0.6762
    SIS892DN-T1-GE3
    DISTI # SIS892DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R (Alt: SIS892DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      SIS892DN-T1-GE3
      DISTI # SIS892DN-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS892DN-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.5889
      • 18000:$0.6059
      • 12000:$0.6229
      • 6000:$0.6489
      • 3000:$0.6689
      SIS892DN-T1-GE3
      DISTI # 86R3819      		Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 30A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
      • 1:$0.7770
      • 3000:$0.7770
      SIS892DN-T1-GE3
      DISTI # 94T2851      		Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 30A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes0
      • 1000:$0.8370
      • 500:$1.0400
      • 250:$1.1900
      • 100:$1.3300
      • 50:$1.5000
      • 25:$1.6800
      • 1:$1.8900
      SIS892DN-T1-GE3
      DISTI # 70459593      		Vishay Siliconix100V 30A 43W 29 mohms @ 10V
      RoHS: Compliant      		0
      • 3000:$0.9840
      SIS892DN-T1-GE3
      DISTI # 78-SIS892DN-T1-GE3      		Vishay IntertechnologiesMOSFET 100V 30A 43W 29 mohms @ 10V
      RoHS: Compliant      		8091
      • 1:$1.6000
      • 10:$1.3200
      • 100:$1.0100
      • 500:$0.8740
      • 1000:$0.6890
      • 3000:$0.6430
      • 6000:$0.6110
      • 9000:$0.5880
      SIS892DN-T1-GE3.Vishay IntertechnologiesMOSFET 100V 30A 43W 29 mohms @ 10V
      RoHS: Compliant      		Americas -
      • 10:$1.4940
      • 250:$1.0580
      SIS892DN-T1-GE3Vishay IntertechnologiesMOSFET 100V 30A 43W 29 mohms @ 10V
      RoHS: Compliant      		Americas -
        SIS892DN-T1-GE3
        DISTI # 1859009        		Vishay IntertechnologiesMOSFET,N CH,DIODE,100V,30A,PPAK12128
        RoHS: Compliant        		0
        • 1000:$1.1300
        • 500:$1.4300
        • 100:$1.7300
        • 10:$2.2200
        • 1:$2.4700
        SIS892DN-T1-GE3
        DISTI # 2083727        		Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 30A, POWERPAK 1
        RoHS: Compliant        		0
        • 6000:$0.9710
        • 3000:$1.0200
        Immagine Parte # Descrizione
        SIS892DN-T1-GE3

        Mfr.#: SIS892DN-T1-GE3

        OMO.#: OMO-SIS892DN-T1-GE3

        		 MOSFET 100V 30A 43W 29 mohms @ 10V
        SIS892DN-T1-GE3

        Mfr.#: SIS892DN-T1-GE3

        OMO.#: OMO-SIS892DN-T1-GE3-VISHAY

        		 MOSFET N-CH 100V 30A 1212-8 PPAK
        SIS892DN-T1-GE3/S892

        Mfr.#: SIS892DN-T1-GE3/S892

        OMO.#: OMO-SIS892DN-T1-GE3-S892-1190

        		 Nuovo e originale
        Disponibilità
        Azione:
        Available
        Su ordine:
        3500
        Inserisci la quantità:
        Il prezzo attuale di SIS892DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        0,88 USD
        0,88 USD
        10
        0,84 USD
        8,39 USD
        100
        0,80 USD
        79,52 USD
        500
        0,75 USD
        375,50 USD
        1000
        0,71 USD
        706,80 USD
        A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
        Iniziare con
        Top