SIS892DN-T1-GE3

Mfr. #:: SIS892DN-T1-GE3
Produttore:: Vishay / Siliconix
Descrizione:: MOSFET 100V 30A 43W 29 mohms @ 10V
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SIS892DN-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:
Maggiori informazioni:: SIS892DN-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore:: Vishay

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: PowerPAK-1212-8

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Vds - Tensione di rottura Drain-Source:: 100 V

Id - Corrente di scarico continua:: 30 A

Rds On - Resistenza Drain-Source:: 29 mOhms

Vgs th - Tensione di soglia gate-source:: 1.2 V

Vgs - Tensione Gate-Source:: 10 V

Qg - Carica cancello:: 14.2 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 150 C

Pd - Dissipazione di potenza:: 52 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: TrenchFET, PowerPAK

Confezione:: Bobina

Serie:: SIS

Tipo di transistor:: 1 N-Channel

Marca:: Vishay / Siliconix

Transconduttanza diretta - Min:: 22 S

Tempo di caduta:: 9 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 11 ns

Quantità confezione di fabbrica:: 3000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 21 ns

Tempo di ritardo di accensione tipico:: 8 ns

Parte # Alias:: SIS892DN-GE3

Tags: SIS892, SIS89, SIS8, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIS892DN-T1-GE3 Descrizione

***ical: Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212-8 T/R

***et Europe: Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R

***i-Key: MOSFET N-CH 100V 30A 1212-8 PPAK

***ied Electronics & Automation: 100V 30A 43W 29 mohms @ 10V

***: N-CHANNEL 100-V (D-S)

***ark: MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.7W; Operating Temperature Range:-55°C to +150°C;;RoHS Compliant: Yes

***nell: MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:0.024ohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; Current Id Max:8A; Power Dissipation:3.7W

***ment14 APAC: MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Power Dissipation Pd:3.7W; Voltage Vgs Max:20V

SIS892DN-T1-GE3 Maggiori informazioni

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SIS892DN-T1-GE3 DISTI # V36:1790_09216113	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0	3000000:$0.6272 1500000:$0.6274 300000:$0.6440 30000:$0.6717 3000:$0.6762
SIS892DN-T1-GE3 DISTI # V72:2272_09216113	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 30A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2531In Stock	1000:$0.7462 500:$0.9452 100:$1.1442 10:$1.4680 1:$1.6400
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 30A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2531In Stock	1000:$0.7462 500:$0.9452 100:$1.1442 10:$1.4680 1:$1.6400
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 30A 1212-8 PPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	15000:$0.6182 6000:$0.6424 3000:$0.6762
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R (Alt: SIS892DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIS892DN-T1-GE3 DISTI # SIS892DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS892DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.5889 18000:$0.6059 12000:$0.6229 6000:$0.6489 3000:$0.6689
SIS892DN-T1-GE3 DISTI # 86R3819	Vishay Intertechnologies	MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.7770 3000:$0.7770
SIS892DN-T1-GE3 DISTI # 94T2851	Vishay Intertechnologies	MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes	0	1000:$0.8370 500:$1.0400 250:$1.1900 100:$1.3300 50:$1.5000 25:$1.6800 1:$1.8900
SIS892DN-T1-GE3 DISTI # 70459593	Vishay Siliconix	100V 30A 43W 29 mohms @ 10V RoHS: Compliant	0	3000:$0.9840
SIS892DN-T1-GE3 DISTI # 78-SIS892DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V 30A 43W 29 mohms @ 10V RoHS: Compliant	8091	1:$1.6000 10:$1.3200 100:$1.0100 500:$0.8740 1000:$0.6890 3000:$0.6430 6000:$0.6110 9000:$0.5880
SIS892DN-T1-GE3.	Vishay Intertechnologies	MOSFET 100V 30A 43W 29 mohms @ 10V RoHS: Compliant	Americas -	10:$1.4940 250:$1.0580
SIS892DN-T1-GE3	Vishay Intertechnologies	MOSFET 100V 30A 43W 29 mohms @ 10V RoHS: Compliant	Americas -
SIS892DN-T1-GE3 DISTI # 1859009	Vishay Intertechnologies	MOSFET,N CH,DIODE,100V,30A,PPAK12128 RoHS: Compliant	0	1000:$1.1300 500:$1.4300 100:$1.7300 10:$2.2200 1:$2.4700
SIS892DN-T1-GE3 DISTI # 2083727	Vishay Intertechnologies	MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1 RoHS: Compliant	0	6000:$0.9710 3000:$1.0200

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Disponibilità

Azione:: Available
Su ordine:: 1991
Inserisci la quantità:

Il prezzo attuale di SIS892DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,60 USD~~; ~~1,60 USD~~

10: ~~1,32 USD~~; ~~13,20 USD~~

100: ~~1,01 USD~~; ~~101,00 USD~~

500: ~~0,87 USD~~; ~~437,00 USD~~

1000: ~~0,69 USD~~; ~~689,00 USD~~

Iniziare con

SIS892 4
SIS89 9
SIS8 62
SIS 843

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SIS892DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes