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SIS890DN-T1-GE3

SIS890DN-T1-GE3
Mfr. #:
SIS890DN-T1-GE3
Produttore:
Vishay / Siliconix
Descrizione:
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SIS890DN-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SIS890DN-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Vishay
Categoria di prodotto:
MOSFET
RoHS:
E
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
PowerPAK-1212-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
30 A
Rds On - Resistenza Drain-Source:
19.5 mOhms
Vgs th - Tensione di soglia gate-source:
1.5 V
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
29 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
52 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
TrenchFET
Confezione:
Bobina
Altezza:
1.04 mm
Lunghezza:
3.3 mm
Serie:
SIS
Tipo di transistor:
1 N-Channel
Larghezza:
3.3 mm
Marca:
Vishay / Siliconix
Transconduttanza diretta - Min:
25 S
Tempo di caduta:
9 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
12 ns
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
16 ns
Tempo di ritardo di accensione tipico:
10 ns
Parte # Alias:
SIS890DN-GE3
Tags
SIS89, SIS8, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 100 V 23.5 mOhm 52 W TrenchFET Power Mosfet - PowerPAK-1212-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes
***nell
MOSFET, N-CH, 100V, PPAK-1212; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0195ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Parte # Mfg. Descrizione Azione Prezzo
SIS890DN-T1-GE3
DISTI # V72:2272_07434473		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		2450
  • 1000:$0.6140
  • 500:$0.6955
  • 250:$0.7063
  • 100:$0.7846
  • 25:$0.9612
  • 10:$0.9649
  • 1:$1.1125
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 30A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		36In Stock
  • 1000:$0.6883
  • 500:$0.8718
  • 100:$1.1242
  • 10:$1.4220
  • 1:$1.6100
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 30A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		36In Stock
  • 1000:$0.6883
  • 500:$0.8718
  • 100:$1.1242
  • 10:$1.4220
  • 1:$1.6100
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 30A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.6237
SIS890DN-T1-GE3
DISTI # 31038280		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		3000
  • 3000:$0.6804
SIS890DN-T1-GE3
DISTI # 31016418		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		2450
  • 1000:$0.6140
  • 500:$0.6955
  • 250:$0.7063
  • 100:$0.7846
  • 25:$0.9612
  • 13:$0.9649
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R - Tape and Reel (Alt: SIS890DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.7249
  • 6000:$0.7029
  • 12000:$0.6749
  • 18000:$0.6559
  • 30000:$0.6379
SIS890DN-T1-GE3
DISTI # SIS890DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R (Alt: SIS890DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIS890DN-T1-GE3
    DISTI # SIS890DN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R (Alt: SIS890DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.9729
    • 6000:€0.6979
    • 12000:€0.5659
    • 18000:€0.4999
    • 30000:€0.4789
    SIS890DN-T1-GE3
    DISTI # 70AC6484    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK T/R - Product that comes on tape, but is not reeled (Alt: 70AC6484)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$1.6100
    • 25:$1.4200
    • 50:$1.2700
    • 100:$1.1200
    • 250:$0.9980
    • 500:$0.8710
    • 1000:$0.6880
    SIS890DN-T1-GE3
    DISTI # 70AC6484    		Vishay Intertechnologies 2885
    • 1:$1.6100
    • 25:$1.4200
    • 50:$1.2700
    • 100:$1.1200
    • 250:$0.9980
    • 500:$0.8710
    • 1000:$0.6880
    SIS890DN-T1-GE3.
    DISTI # 30AC0125    		Vishay IntertechnologiesN-CHANNEL 100V POWERPAK 1212-8 THUNDERFET MOSFET 23.5MOHM@10V , ROHS COMPLIANT: YES0
    • 1:$0.6750
    • 3000:$0.6750
    SIS890DN-T1-GE3
    DISTI # 78-SIS890DN-T1-GE3    		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		4625
    • 1:$1.4200
    • 10:$1.1700
    • 100:$0.8960
    • 500:$0.7700
    • 1000:$0.6760
    • 3000:$0.6750
    SIS890DN-T1-GE3
    DISTI # 2283693    		Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-1212
    RoHS: Compliant    		2001
    • 1:$2.2500
    • 10:$1.8500
    • 100:$1.4200
    • 500:$1.2200
    • 1000:$1.0800
    • 3000:$1.0800
    SIS890DN-T1-GE3
    DISTI # 2283693    		Vishay IntertechnologiesMOSFET, N-CH, 100V, PPAK-1212
    RoHS: Compliant    		2371
    • 5:£1.1100
    • 25:£1.0000
    • 100:£0.7680
    • 250:£0.7150
    • 500:£0.6610
    SIS890DN-T1-GE3
    DISTI # C1S803603778538    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 8.8A 8-Pin PowerPAK 1212 T/R
    RoHS: Compliant    		2450
    • 250:$0.7057
    • 100:$0.7841
    • 25:$0.9602
    • 10:$0.9640
    SIS890DN-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8Americas - 15000
      Immagine Parte # Descrizione
      TMS37157IRSARG4

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      OMO.#: OMO-TMS37157IRSARG4

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      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT .015uF 50volts C0G 1%
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      1206SFS125F/63-2

      Mfr.#: 1206SFS125F/63-2

      OMO.#: OMO-1206SFS125F-63-2

      		 Surface Mount Fuses Slow Blow
      12065A103JAT2A

      Mfr.#: 12065A103JAT2A

      OMO.#: OMO-12065A103JAT2A-AVX

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts 0.01uF 5% C0G 1206 SIZE
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      1206SFS125F/63-2

      Mfr.#: 1206SFS125F/63-2

      OMO.#: OMO-1206SFS125F-63-2-LITTELFUSE

      		 Surface Mount Fuses Slow Blow
      VJ1812A153FXAAT

      Mfr.#: VJ1812A153FXAAT

      OMO.#: OMO-VJ1812A153FXAAT-VISHAY

      		 Multilayer Ceramic Capacitors MLCC - SMD/SMT .015uF 50volts C0G 1%
      TMS37157IRSARG4

      Mfr.#: TMS37157IRSARG4

      OMO.#: OMO-TMS37157IRSARG4-TEXAS-INSTRUMENTS

      		 RFID Transponders Pass Lo Freq Interf Dev W/ EEPROM
      Disponibilità
      Azione:
      15
      Su ordine:
      1998
      Inserisci la quantità:
      Il prezzo attuale di SIS890DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,41 USD
      1,41 USD
      10
      1,16 USD
      11,60 USD
      100
      0,90 USD
      89,50 USD
      500
      0,77 USD
      384,50 USD
      1000
      0,61 USD
      607,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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